The pharmacokinetics of florfenicol (FF) was studied in plasma after a single dose (40 mg/kg) of intramuscular (i.m.) or oral gavage (p.o.) administration to crucian carp (Carassius auratus cuvieri) in freshwater at 25 °C. Ten fish per sampling point were examined after treatment. The data were fitted to two-compartment open models follow both routes of administration. The estimates of total body clearance (CL(b) ), volume of distribution (V(d) /F), and absorption half-life (T(1/2(ka)) ) were 0.067 L/h/kg and 0.145 L/h/kg, 2.21 L/kg and 1.04 L/kg, 2.75 and 1.54/h following i.m. and p.o. administration, respectively. After i.m. injection, the elimination half-life (T(1/2(β)) ) was calculated to be 38.2h, the maximum plasma concentration (C(max) ) to be 16.82 μg/mL, the time to peak plasma FF concentration (T(max) ) to be 1.50 h, and the area under the plasma concentration-time curve (AUC) to be 597.4 μg/mL·h. Following p.o. administration, the corresponding estimates were 2.17 h, 29.32 μg/mL, 1.61 h, and 276.1 μg/mL·h.

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TFTs with solution-processed TOS channels generally demonstrate mobility of an order of magnitude higher than a-Si, [6,7] and one common practice to achieve these high-performance TFTs is to use high-k dielectric materials as the gate insulator instead of SiO 2. [8][9][10][11] For example, Xu et al. reported nearly a 10× or 25× increase in the mobility of solution-processed In 2 O 3 or indium-zinc-oxide, respectively, by changing the gate dielectric material from SiO 2 to AlO x . [10] A good amount of similar empirical data can be found in the literature, [12][13][14][15] some examples of which are summarized in Table S1 (Supporting Information). However, despite the wide range of TOS and high-k materials being explored, there is currently no well-established explanation for the phenomenon of higher mobility in oxide TFTs that have high-k gate dielectrics. With a better understanding of the interactions of materials that enhance electron transport, the semiconductor-gate dielectric interface can be engineered to take full advantage of metal-oxide semiconductors for highperformance electronics.Various theories have been proposed to explain the boost in mobility observed in TOS/high-k devices, such as an increase in carrier concentration that fills localized states and allows bandlike transport, [8] reduced trap density at the semiconductor-dielectric interface, [16] electron donation from the gate dielectric, [17] and defect relaxation and suppression of free carriers resulting from diffusion of material from the gate dielectric to the semiconductor. [18] However, so far, only a small number of studies have been focused on explaining the fundamental mechanism behind these observations. In one such study, an analytical model was developed illustrating that field-effect mobility increases with higher gate-insulator capacitance. [19] However, the experimental verification of their model relied on devices with spin-coated HfLaO x as the gate dielectric, which may not properly account for any mobility effects seen in other more common high-k dielectrics (i.e., ZrO 2 or HfO 2 ). Furthermore, a model based on a solution-processed dielectric material is unlikely to be generalizable to explain the mobility dependence for the more commonly used vacuum-deposited dielectric materials because they tend to exhibit greater electronic disorder and nonideal insulating behavior. [20] Their incorporation into transistors has been complicated by defects such as fixed charges, electron traps, and mobile ions. [10] As shown in In metal-oxide thin-film transistors (TFTs), high-k gate dielectrics often yield a higher electron mobility than SiO 2 . However, investigations regarding the mechanism of this high-k "mobility boost" are relatively scarce. To explore this phenomenon, solution-processed In 2 O 3 TFTs are fabricated using eight different gate dielectrics (SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , and bilayer SiO 2 /high-k structures). With these structures, the total gate capacitance can be varied independently from the semiconductor-die...

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