A free-standing polymer electrolyte called an ion gel is employed in both organic and inorganic thin-film transistors as a high capacitance gate dielectric. To prepare a transistor, the free-standing ion gel is simply laid over a semiconductor channel and a side-gate electrode, which is possible because of the gel's high mechanical strength.
Self-assembly of ABA triblocks in ionic liquids provides a versatile route to highly functional physical ion gels, with promise in applications ranging from plastic electronics to gas separation. However, the reversibility of network formation, so favorable for processing, restricts the ultimate mechanical strength of the material. Here, we describe a novel ABA system that can be chemically cross-linked in a second annealing step, thereby providing greatly enhanced toughness. The ABA triblock is a poly(styrene-b-ethylene oxide-b-styrene) polymer in which about 25 mol % of the styrene units have a pendant azide functionality. After self-assembly of 10 wt % triblock in the ionic liquid [EMI][TFSA], the styrene domains are cross-linked by annealing at elevated temperature for ca. 20 min. The high ionic conductivity (ca. 10 mS/cm) of the physical ion gels is preserved in the final product, while the tensile strength is increased by a factor of 5.
There has been impressive progress in the fabrication and characterization of p-type organic electrolyte-gated transistors (EGTs). Unfortunately, despite the importance of n-type organic transistors for complementary circuits, fewer investigations have focused on developing electrolytes as gate dielectrics for n-type organic semiconductors. Here, we present a novel single ion conductor, a polymerized ionic liquid (PIL) triblock copolymer (PS-PIL-PS) composed of styrene (PS) and 1-[(2-acryloyloxy)ethyl]-3-butylimidazolium bis(trifluoromethylsulfonyl)imide (PIL), that conducts only the TFSI anion. This triblock copolymer acts as a gate dielectric to allow low-voltage n-type organic EGT operation. Impedance characterization of PS-PIL-PS reveals that there are three polarization regions: (1) dipolar relaxation, (2) ion migration, and (3) electric double layer (EDL) formation. These polarization regions are controlled by film thickness, and rapid EDL formation can be obtained in thinner polyelectrolyte films. In particular, a 500 nm-thick polyelectrolyte film exhibits a large capacitance of ∼1 μF/cm(2) at 10 kHz. Employing this single ion conducting PIL triblock copolymer as the gate insulator, we achieved low voltage operation (<1 V supply) of poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)) n-type organic EGTs (electron mobility of ∼0.008 cm(2)/(V·s) and ON/OFF current ratio of ∼2 × 10(3)) by preventing electrochemical doping. Furthermore, the recognition that the performance of n-type organic EGTs is diminished by 3D electrochemical doping suggests that it may be necessary to have a unipolar electrolyte to gate n-type organic semiconductors. Finally, we highlight that the use of PIL block copolymer electrolytes as gate insulators opens unique opportunities to explore the role of ion penetration in n-type organic EGTs by tuning the extent of electrochemical doping.
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