Articles you may be interested inInfluence of strain and quantum confinement on the optical properties of InGaAs/GaAs V-groove quantum wires

A novel cross-sectional sample preparation technique for quantum wire (QWR) structures is described. By coating a thin layer of Au with a designed pattern on the sample as a marker to indicate the position of the wire pattern, the location of the thinned area can be controlled precisely. An example of applying this technique to an InGaAs/GaAs QWR structure is demonstrated. This technique can also be applied to any other small dimensional structures or devices with specific regions of interest.