The present paper concerns theoretically investigated features of spatiotemporal establishment of the temperature at the local high microwave heating of semiconductor object using a near-field micromodifier. We propose a method that partially allows withdrawing a problem of the required temperature and locality retention through by means of the combined pulsed microwave power supply of the micromodifier. onTVlMVl3AUVl� PE>K�MA n�TAHVI� CB4 M�KPOMO.Q�CI>�KATOPA B M�KPOTEXHOIlOr��X rOPAl!1eHKO 10. E., napKI!1H C. 10., Cnl!1nYeHKO H. 111 ., �ep6aK E. n. XapbKoecKuO Hau,uoHanbHblO YHueepcumem paouo3neKmpoHuKu np.
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