The microgroove cannot be observed on the polyimide film surface. Therefore the cause of liquid crystal orientation is due to the polymer molecule of polyimide film via Ink-jet Printing Method arranged in order primarily. The different performances of polyimide film between the rubbing and ion-beam processed were also investigated. Meanwhile, the related real panels will exhibit in SID 2005, too. 1.Introduction Alignment process is a necessary procedure in the manufacture LCD industry. There are two purposes with alignment process. One is joined the orientational order of LC to the molecular order at the PI film surface when the applied voltage was less that the threshold voltage. The other one is asked the LC molecules to recovery the initial state distinctly when the applied voltage was released. Hence the performance of LCD was determined by the alignment ability of LC molecules. Nevertheless, the size of glass substrate is larger and larger, and the traditional rubbing process will show difficulties like roller bending. Ion-beam-processed was used to substitute for rubbing process.Ink-jet printing technology is also able to correspond with the greater size panel. Comparing commercial APR printing process with ink-jet technology, as shown in Figures 1(a) and 1(b), respectively. The maximum utility rate of polyimide for ink-jet process is up to 95%, which is higher than that for the commercial process ca 25%. Even though ink-jet process has great competitive advantage, however the uniformity of coating film associated with the stage-moving rate, droplet frequency and material properties is still unstable so that the use of polyimide film coating with ink-jet technology is a growing challenge in modern digital display. With coating polyimide film via ink-jet process, whereas the phenomena of coffee-ring and non-uniformity in film thickness would be the problems. To resolve these problems, the approach of pattern design and adjusting process parameters is significant.The subject of this study is to investigate the probability of next generation with ion-beam-processed and polyimide film ink-jet printing technology. (a) (b) Figure 1 The (a) APR printing and (b) ink-jet Process of polyimide film coating. Experimental ProceduresThe indium-tin-oxide (ITO)-coated glass substrates with a substrate dimension of 74 54 3 mm 3 were employed to manufacture the test panels. The substrates were spin-coated with JSR polyimide, then were baked, cured and carried out the ion-beam-processed. The ion-beam species used for this research was argon. The 90° TN test panels were consisted of two substrates with directs of ion-beam irradiation perpendicular each other, and the cell gap was maintained at ca 4 µm by using ball spacers. In addition, the 90° TN test panels were filled with nematic Merck's LC.There are incident ion-beam angle, vacuum pressure, stage-moving rate, etc. regarding the ion-beam-processed, and one of the certain notable factor is incident ion-beam angle. In this investigation, the parameters of incident ion-beam a...
High performance N-type organic TFTs have been fabricated at relatively low temperature (100 o C) by spin coating and the electrical performance investigated. Furthermore, the these bias stress stability of these devices using different protocols were also explored. Our results reveal that organic TFTs could be adopted as a potential switch candidate driving display backplanes. IntroductionIn recent years, displays fabricated on flexible substrates have attracted intensively attentions owing to their potential wide applications in electronics. Organic thin-film transistor (OTFT) is a promising candidate for flexible display backplane due to its low-cost and low-temperature manufacturing processes and mechanical robustness. The performance of OTFTs has been improving dramatically over the past years [1][2][3], and numerous studies have addressed display applications of OTFTs [4][5].Nonetheless, the lower field effect mobility and I on /I off ratio versus conventional inorganic TFTs limit the application of OTFTs. Not only the mobility and I on /I off ratio but also the higher operating voltages (20~100 V) are also a bottleneck and improvements are needed. Although the field effect mobility was improved by using pentacene-based materials, the patterning for OSC is also a critical issue for the fabrication of OTFT circuits. One of the reasons for the higher OTFT operating voltages is the limited performance of the organic gate insulator layer. Compared to traditional gate insulators used in a-Si:H TFTs, the organic gate insulator has lower dielectric constant than SiOx and SiNx and greater thikness, resulting in reduced gate capacitance.In this paper, organic TFTs fabricated with a Polyera n-type organic semiconductor were fabricated by spin coating and processed at low temperatures (100 o C). The operating voltages of these organic TFTs were improved, enabling a -20 ~ 20 voltage window. The field effect mobility, threshold voltage and I on /I off were 0.27 cm 2 /V-sec, -1.1 V, and 6x10 6 , respectively. The electrical performance of our OTFTs are similar to those of a-Si:H TFTs and could be utilized as a panel switch. Furthermore, initial results on the corresponding bias stress performance for our organic TFTs are also presented in this paper. ExperimentsThe infrastructure of our designed OTFT is based on the top gate / bottom contact architecture, and all the materials were provided by Polyera Corporation. The substrate was OA-10G glass that without containing any alkali components to satisfy the eco-friendly requirement. The glass was initially cleaned by acetone and isopropyl alcohol (IPA) prior device fabrication. The B2000 E solution was deposited on the substrate through spin coating with 2000 rpm for 30 seconds to function as a buffer layer. After coating the buffer layer, the exposure process is set at 8000 mJ/cm 2 under 365 nm wavelength to ensure the fully crosslinking of the thin film. Then, a 50-nm thick Ag layer was deposited by thermal evaporating followed by being patterned as a source and d...
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