In this work, silicon photonics structures for the optical addressing of trapped ion is developed for quantum computing applications. Grating-waveguide-grating structures of various designs are designed, and fabricated for various radius curvatures of 12, 15, 25 and 30 µm, respectively. From the optical measurements, gratings with radius of curvature of 25 and 30 µm exhibit lower power loss of 36.5 and 33.9 dB with better-focused beam profiles as compared to those with radius of curvature of 12 and 15 µm. The beam width from these gratings ranges between 17.31 to 41.54 µm, which provides the feasibility to perform optical addressing on 2 to 4 Sr + ions trapped along the ground electrode of the ion trap.
Tall,
crystalline carbon nanotubes (CNTs) are desired to successfully
integrate them in various applications. As the crystallinity of CNTs
improves with increasing growth temperatures, higher growth temperatures
are required to obtain crystalline CNTs. However, in a typical chemical
vapor deposition (CVD) process, CNT growth rate reduces when the growth
temperature exceeds a specific level due to the degradation of the
catalyst particles. In this study, we have demonstrated the improved
catalytic activity of nickel/ferrocene-hybridized catalyst as compared
to sole ferrocene catalyst. To demonstrate this, CNTs are grown on
bare silicon (Si) as well as nickel (Ni) catalyst-deposited substrates
using volatile catalyst source (ferrocene/xylene) CVD at the growth
temperatures ranging from 790 to 880 °C. It was found that CNTs
grown on bare Si substrate experience a reduction in height at growth
temperature above 860 °C, whereas the CNTs grown on 10 nm Ni
catalyst-deposited substrates experience continuous increase in height
as the temperature increases from 790 to 880 °C. The enhancement
in the height of CNTs by the addition of Ni catalyst is also demonstrated
on 5, 20, and 30 nm Ni layers. The examination of CNTs using electron
microscopy and Raman spectra shows that the additional Ni catalyst
source improves the CNT growth rates and crystallinity, yielding taller
CNTs with a high degree of structural crystallinity.
As a novel class of two-dimensional materials, MXene has provoked tremendous progress for various applications in functional devices. Here, we pioneer a preliminary understanding on the field emission behavior of MXene for the first time. Ti3C2 paper is fabricated by using facile filtration method, and multiple vertical sheets appear on the surface of MXene paper with high electrical conductivity (2.93 × 105 S m−1) and low work function (3.77 eV). The field electron emission performance and electric field distribution on MXene emitters are measured and simulated under planar and standing conditions. Both emitter conditions exhibit stable, uniform electron emission pattern, and the standing emitter achieves high emission current density of 59 mA cm−2 under 7.5 V μm−1. This work demonstrates the feasibility of MXene as cold electron source, establishing a preliminary foundation for its applications in field emission-based devices.
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