The method of GaAs film growth from a solution between two substrates was considered.
The calculated thickness as a function of growth temperature and distance between substrates was in a good agreement with experimental results.
The investigation of the film roughness as a function of cooling rate, distance between substrates and their orientations was fulfilled.
Electrical properties of the films as a function of substrate orientations in the interval (100)–(111)–(011) were demonstrated. The possibility of application of this method for the investigation of film doping as a function of temperature and growth rate was shown.
In,Gal-,As films with x 5 0.12 were grown from a thin solution layer between substrates. The calculation of final film thickness as a function of liquid phase composition, based on supposition of film deposition only on the substrate, is in a good agreement with experimental results. The dependences between compositions of liquid and solid phases at 800°, 750" and 700 "C were determined.The morphology of the film surface was investigated as a function of liquid phase composition and (IOO), (1 11) A, (1 11) €3 substrate orientations. Dislocation density increases from lo4 cm-a to lo7 cm-2 with change of x from 0 to 0.12.
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