In order to improve the luminance of blue emission of the plasma display panel (PDP), BaMgAl10O17:Eu2+ (BAM) phosphors were synthesized and were coated with SiO2. It was revealed that the surface coating of phosphors with SiO2 leads to an increase in luminance intensity of PDP devices. This seems to be due to the increase of the excitation light which is transmitted into the phosphor, i.e., an effective vacuum ultraviolet absorption of the phosphor via SiO2. The experimental results suggest that the surface coating of BAM with SiO2a is a way to improve the luminance of the PDP.

The silicon nitride (SiNx) atomic layer deposition with bis(dimethylaminomethylsilyl)-trimethylsilyl amine precursor and N2 remote plasma was investigated. The process window ranged from 250 to 400 °C, and the growth rate was about 0.38 ± 0.02 Å/cycle. The physical, chemical, and electrical characteristics of the SiNx thin films were examined as a function of deposition temperature and plasma power. Based on the results of spectroscopic ellipsometry and x-ray photoelectron spectroscopy, the growth rate and state of binding energy showed little difference depending on the plasma power. The better film properties such as leakage current density and etch resistance were obtained at higher deposition temperatures and higher plasma power. High wet etch resistance (wet etch rate of ∼2 nm/min) and low leakage current density (∼10−8 A/cm2) were obtained. The step coverage, examined by transmission electron microscopy, was about 80% on a trench with an aspect ratio of 4.5.

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The authors investigated the effective Schottky barrier heights of metal and silicon contacts after insertion of insulator layers with different conduction band offsets. A decrease in Schottky barrier height after insertion of an insulator layer was observed. In particular, the Schottky barrier height of metal/semiconductor contacts was lowest when a ZnO layer was inserted compared to the other insulator layer types, because the conduction band offset between ZnO and silicon was the lowest among those measured. The authors also investigated current density as a function of the thickness of the insulator and doping concentration of silicon.