In order to improve the luminance of blue emission of the plasma display panel (PDP), BaMgAl10O17:Eu2+ (BAM) phosphors were synthesized and were coated with SiO2. It was revealed that the surface coating of phosphors with SiO2 leads to an increase in luminance intensity of PDP devices. This seems to be due to the increase of the excitation light which is transmitted into the phosphor, i.e., an effective vacuum ultraviolet absorption of the phosphor via SiO2. The experimental results suggest that the surface coating of BAM with SiO2a is a way to improve the luminance of the PDP.
In order to improve the material properties of the protective layer for alternating current plasma display panels, a small amount of ZnO was added to the MgO protective layer. The electrical properties and the surface characteristics of the Mg1−xZnxO films, deposited by a radio frequency magnetron sputtering method, were investigated. As the concentration of ZnO increases, the crystallinity of Mg1−xZnxO thin films improves and the grain size becomes larger. The firing and the sustaining voltages of panels with the Mg1−xZnxO protective layers, when the concentration of ZnO was 0.5at.%, was reduced by 20V, compared with the conventional panels with the MgO protective layers. It was also found that the panels with Mg1−xZnxO protective layers show the higher discharge intensity as the ZnO content increases at the same applied voltages, compared with panels with the conventional MgO protective layers.
The effects of oxygen flow rates on the characteristics of electron beam evaporated MgO thin films are investigated. The experimental results reveal that the crystallinity, surface roughness, stoichiometry, density, and secondary electron emission coefficient of MgO thin films change with the oxygen flow rates during film deposition. In addition, discharge voltages of PDP device strongly depend on the stoichiometry and density of MgO film.
In order to improve the primary color purity of the plasma display panel (PDP), inorganic (SiO2)1−x(Nd2O3)x alloy films have been fabricated by the rf-magnetron sputtering method, and their optical properties have been investigated as functions of Nd2O3 contents in films and thickness of films. The study has revealed that absorption in (SiO2)1−x(Nd2O3)x films is due to intratransition within the 4f shell of the Nd3+ ion, and that it becomes larger with increasing Nd3+ ion concentrations in films and film thickness. In the PDP devices with our band rejection color filters, luminances from neon gas discharge itself and sidebands of phosphors are sufficiently reduced, resulting in wider color gamut and higher color purity.
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