We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide (PI), the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon-dioxide gate-insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk-accumulationa condition in which the channel accumulation layer of electrons extends the entire depth of the active-layer. It is shown experimentally that bulk-accumulation (BA) a-IGZO TFTs exhibit better stability under bending stress compared to single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain, is found to be a result of the high gate-drive intrinsic of the BA TFTs.
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