Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

Jin, Seonghyun; Kim, Tae‐Woong; Seol, Young-Gug; Mativenga, Mallory; Jang, Jin

doi:10.1109/led.2014.2311172

Cited by 33 publications

(8 citation statements)

References 13 publications

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“…The TFT with 300 °C SiO2 shows a negligible negative shift in Vth under NBS, attributed to the difficulty in forming a hole inversion layer in the n-type oxide semiconductor layer [3]. Under PBS, the negative Vth shift is considered to be caused by the ionization of the donor state, including oxygen vacancy (Vo) and hydrogen [10,11]. The better compactness and reliability of high-temperature SiO2 can reduce the migration of mobile water-related ions and the trapping at the GI/IZO interface, thus exhibiting less negative Vth drift.…”

Section: Methodsmentioning

confidence: 99%

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

Huang

Líu

Fan

et al. 2023

Symp Digest of Tech Papers

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The electrical characteristics and stability of dual‐gate amorphous InZnO thin film transistors (a‐IZO TFTs) with top gate insulators (TGIs) deposited under different conditions were investigated. It is found that the TFT with 150°C SiO2 as TGI has higher mobility, while TFT with 300°C SiO2 as TGI has lower off‐state leakage current and better stability under bias stress. Experimental results show that the TFT with stacked TGI deposited at 150°C first and then 300°C can combine the merit of the 150°C SiO2 and 300°C SiO2, achieving high saturation mobility (23.9 cm2/V·s), low off‐state leakage current (10‐14 ~10‐12 A) and also good stability under negative bias stress (NBS) and positive bias stress (PBS) of 3600 s @30 V, with only negative drift of 0.02 V and 0.15 V, respectively. Moreover, it also performs well under negative bias temperature illumination stress (NBTIS) and positive bias temperature illumination stress (PBTIS).

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Section: Methodsmentioning

confidence: 99%

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

Huang

Líu

Fan

et al. 2023

Symp Digest of Tech Papers

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“…In fact, the same mechanism is also applicable to PBS and PBIS. It is reported a negative V th for PBS degradation and attributed it to V 2+ O defects [27], [28]. In most cases positive shift of V th is reported in PBS degradation of a-IGZO.…”

Section: B Nbismentioning

confidence: 98%

A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination

Wang

Zhang

et al. 2019

IEEE J. Electron Devices Soc.

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Degradation behaviors of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under negative bias stress (NBS) and negative bias illumination stress (NBIS) are investigated systematically. In some cases, a two-stage degradation behavior of a-IGZO TFTs is observed under both NBS and NBIS, which begins with a small positive shift of threshold voltage (V th), and is followed by a large negative V th shift. There is an intrinsic correlation between the degradations of NBS and NBIS. Quantitatively, both stress gate biases (V G) and temperature dependencies of V th of the two degradations are found to be the same and the recovery processes are also very similar. A unified model of NBS and NBIS is proposed to consistently explain the degradation behaviors of a-IGZO TFTs and their correlation. INDEX TERMS a-InGaZnO, thin-film transistors (TFTs), degradation, light illumination, gate bias stress.

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“…2(b)]. [3][4][5] Better stability is attributed to high gate drive and less carrier scattering at the interfaces. Because of the bulk accumulation/depletion, the subthreshold swing is always small, the turn-on voltage is always around 0 V, and device-to-device uniformity is much better than that of singlegate TFTs.…”

Section: Frontline Technologymentioning

confidence: 99%

Bulk‐Accumulation Oxide‐TFT Backplane Technology for Flexible and Rollable AMOLED Displays: Part I

Jang¹

2016

Information Display

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In the first of a two‐part series on a new backplane technology for flexible and rollable AMOLED displays, the author reviews a bulk‐accumulation (BA) amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT) with 3–5 times the drain current of a comparable conventional single‐gate TFT. The advantages of BA TFTs include excellent performance from circuits such as ring oscillators and gate drivers and also higher robustness under mechanical bending.

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Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

Cited by 33 publications

References 13 publications

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination

Bulk‐Accumulation Oxide‐TFT Backplane Technology for Flexible and Rollable AMOLED Displays: Part I

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