The discharge characteristics of the coplanar and face‐to‐face sustain electrode structures were examined. The visible spectrum (VIS) of a Ne emission of 585 nm and infrared (IR) of 823 and 828 nm were observed under the two different coplanar and face‐to‐face structures of the 6‐inch test panel with non‐phosphor discharge cell. The IR(Xe)/VIS(Ne) plot was used to calculate the discharge efficiency in the PDP‐cell. In a coplanar sustain electrode structure, the intensity ratio between the IR(Xe) and VIS(Ne) was relatively low, whereas in a face‐to‐face sustain electrode structure, the intensity ratio between the IR(Xe) and VIS(Ne) was very high. In a coplanar electrode structure, the distribution of the IR(Xe) and VIS(Ne) was localized on the coplanar electrode near the space between the two sustain electrode, whereas in the face‐to face sustain electrode structure, the distribution of the IR(Xe) and VIS(Ne) was broad over the entire discharge region area. Finally, as a result of the integration of the IR(Xe)/VIS(Ne) distribution, the discharge efficiency of the face‐to‐face sustain electrode structure was improved by about 2.5 times than that of the coplanar sustain electrode structure.
Theoretical models of the variations of the peak positions of X-ray rocking curves as a function of the azimuthal angle of a single-crystal wafer have been proposed. These models completely describe the variations of the peak positions both when the surface normal of a wafer is parallel and when it is not parallel to the rotation axis of the goniometer used. Based on the models, an accurate measurement method for the surface orientation of a single-crystal wafer with a small surface miscut of < $3 has been proposed through rocking curve measurements using a high-resolution X-ray diffractometer. The method measures the misalignment of the sample surface normal with respect to the rotation axis of the goniometer as well as the surface orientation of the wafer. The surface orientation has been measured for a 6 inch (152.4 mm) singlecrystal sapphire wafer, and the misalignment of the surface normal from the rotation axis was determined. The results were compared with those from a different method. In addition, a simple and accurate method to obtain the surface orientation of a wafer is proposed by measuring only four rocking curves, two each at two sample azimuths 180 apart.
The discharge characteristics of the face-to-face and coplanar sustain electrode structures in 42" full-HD grade test panel were investigated. The UV conversion efficiency (plasma efficiency) was calculated by the visible emission of 585 nm from the Ne and infrared emission of 823 and 828 nm from Xe in the two different face-to-face and coplanar 6-inch test panels by using the digital photo meter (PR-920) and the spectrometer (diode array rapid analyzer system). The luminance efficiency of the face-to-face and coplanar sustain electrode structure were measured at a 4 % Xe content and a pressure of 450 Torr, and driving frequencies of 100 kHz with a duty ratio of 40 %, respectively. As a result, the UV conversion efficiency (plasma efficiency) of the face-to-face sustain electrode structure was improved by about 1.64 to 1.84 times than the coplanar structure and the luminance efficiency of the faceto-face structure was improved by about 2.03 times than the coplanar structure in the 42" full-HD grade AC-PDPs.
In the study, an interlayer was observed in a nano-meter scale SiO2 overlayer on Si substrate by X-ray reflectivity(XRR) analysis and a new method is introduced for the XRR analysis of SiO2 ultra-thin films on Si substrate. The normalized reflectivity curves were analyzed by fitting with the calculated reflectivity curves which were also normalized with the same reference curves. The XRR analyses show that the variation of the positions of the thickness fringes in the measured reflectivity curve is caused by the interference effect from two oxide layers of different refractive indices and of different thicknesses with each other. The result indicates that there exists a SiO2 interlayer of a different refractive index between the SiO2 overlayer and the Si substrate. The analytical method used in the study determines the thickness of a ultra-thin SiO2 layer on Si with low uncertainty.
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