We have fabricated III-V gain region/Si waveguide hybrid lasers with an InP-based two-storied ridge structure using a direct bonding technology. Continuous-wave operation at a temperature of 20oC with a threshold current as low as 30 mA was obtained for a hybrid laser consisting of a Fabry-Perot cavity with facets formed on the Si waveguide, and it was achieved thanks to a high optical coupling efficiency of over 80% at the interface between the III-V gain region and the Si waveguide using a two-storied ridge structure and a taper waveguide. The wavelength tunable laser which is comprised of a Si cavity with a loop mirror and double ring filters and III-V gain regions with laser and semiconductor optical amplifier (SOA) sections was demonstrated by utilizing this hybrid structure. It exhibited a wide wavelength tuning range of 48.6 nm and an optical amplification of 10 dB by SOA.
Hybrid GaInAsP/SOI ridge-waveguide Fabry-Pérot lasers with reduced thermal resistance were fabricated and measured. The lasers were formed by room-temperature surface-activated bonding of InP and SOI wafers. Thin SiO2 film was introduced as ridge-sidewall insulation to increase heat flow to p-electrode side-metal. By incorporating a thermal shunt structure and Au electroplating, a single-facet output power of 20 mW and lasing operation up to 110 °C were achieved for 2.0 mm cavity length under continuous-wave conditions. The proposed structure showed record low thermal resistance of 14.3 K/W and threshold current density of approximately 0.7 kA/cm2.
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