III-V gain region/Si external cavity hybrid tunable lasers with InP-based two-storied ridge structure

Hiratani, Takuo; Fujiwara, Naoki; Kikuchi, Takehiko; Inoue, N.; Ishikawa, Tsutomu; Nitta, Toshiyuki; Eissa, Moataz; Oiso, Yoshitaka; Nishiyama, Nobuhiko; Yagi, Hideki

doi:10.1109/islc51662.2021.9615823

Cited by 4 publications

(4 citation statements)

References 1 publication

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“…[23][24][25][26] We have also reported a GaInAsP/SOI hybrid laser using a III-V/SOI hybrid gain section and Si waveguide resonators using direct bonding technology. [27][28][29][30] As mentioned earlier, there have been several reports on photonic FPGAs or R-PICs. These PICs consist of only passive elements such as waveguides; 10,11) there are only a few reports of photonic FPGAs that include light sources and active elements.…”

Section: Introductionmentioning

confidence: 97%

Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI

Makihara¹,

Eissa²,

Amemiya³

et al. 2022

Jpn. J. Appl. Phys.

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To achieve a reconfigurable photonic integrated circuit with active elements, we proposed a reflectivity tunable mirror constructed using a Mach–Zehnder interferometer (MZI) with a micro heater and loop waveguide on a silicon photonics platform. In this paper, the principle of the operation, design, fabrication, and measurement results of the mirror are presented. In theory, the phase shift dependence of the mirror relies on the coupling coefficient of the directional couplers of the MZI. When the coupling coefficient κ2 was 0.5 and 0.15, the reflection could be turned on and off with a phase shift of π/2 and π, respectively. The reflection power of the fabricated mirror on the silicon on insulator (SOI) substrate was changed by more than 20 dB by a phase shift. In addition, it was demonstrated that the phase shift dependence of the mirror changes with the coupling coefficient of the fabricated devices.

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Section: Introductionmentioning

confidence: 97%

Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI

Makihara¹,

Eissa²,

Amemiya³

et al. 2022

Jpn. J. Appl. Phys.

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“…We will be using a QD microring laser, given that quantum dot lasers exhibit low threshold currents, for the sake of keeping power consumption low. As shown in Figure 3(e), the output power of the injected laser increases non-linearly with input optical power in a manner that resembles a sigmoid function, a commonly used activation function in neural networks [12]. Power monitoring is essential for programming the MZI meshes and training the neural networks.…”

Section: Introductionmentioning

confidence: 99%

Silicon photonics for energy-efficient neuromorphic computing

Tossoun

2023

Emerging Applications in Silicon Photonics III

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New machine learning algorithms such as deep neural networks and the availability of large datasets have created a large drive towards new types of hardware capable of executing these algorithms with higher energy-efficiency. Recently, silicon photonics has emerged as a promising hardware platform for neuromorphic computing due to its inherent capability to process linear and non-linear operations and transmit a high bandwidth of data in parallel. At Hewlett Packard Labs, an energy-efficient dense-wavelength division multiplexing (DWDM) silicon photonics platform has been developed as the underlying foundation for innovative neuromorphic computing architectures. The latest research on our silicon photonic neuromorphic platform will be presented and discussed.

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“…In previous works, we have reported InP-based gain region/Si waveguide hybrid lasers fabricated via the wafer-to-wafer (WtW) direct bonding process with surface activation by fast-atom beam. [35][36][37] An InP-based two-storied ridge structure with two-step taper waveguides has been introduced for the optical coupling of the III-V active and Si waveguide sections, 36,37) and a high optical coupling efficiency at the III-V/Si interface and its very small wavelength dependence have been indicated. By utilizing the features of the two-storied ridge structure, the wide wavelength tuning range operation of InP-based gain region/Si waveguide hybrid tunable lasers and the monolithic integration of a semiconductor optical amplifier to tunable lasers have been demonstrated using the WtW bonding process.…”

Section: Introductionmentioning

confidence: 99%

“…By utilizing the features of the two-storied ridge structure, the wide wavelength tuning range operation of InP-based gain region/Si waveguide hybrid tunable lasers and the monolithic integration of a semiconductor optical amplifier to tunable lasers have been demonstrated using the WtW bonding process. 36,37) As another point towards the monolithic integration of various functionalities, such as modulators and photodetectors, the chip-on-wafer (CoW) direct bonding process which enables the integration of various types of III-V epitaxial layer structures on a silicon-on-insulator (SOI) wafer is indispensable. [38][39][40] As the bonding process for the InP chips and SOI wafer, we adopted the hydrophilic bonding process using UV-ozone treatment, since surface treatment by UV-ozone is expected to be a low damage and effective hydrophilization process, [41][42][43][44] and we think that this bonding process is very suitable for the fabrication of photonic devices.…”

Section: Introductionmentioning

confidence: 99%

III–V gain region/Si waveguide hybrid lasers by chip-on-wafer hydrophilic bonding process using UV-ozone treatment

Kikuchi,

Kurokawa,

Fujiwara

et al. 2023

Jpn. J. Appl. Phys.

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The direct bonding process of InP chips on a silicon-on-insulator (SOI) wafer is investigated using surface hydrophilization by ultra-violet (UV)-ozone treatment. The influence of the treatment on surface roughness is observed by atomic force microscopy, and found to be negligibly small. A high-quality III-V/Si bonding interface without crystal defects is verified in a scanning transmission electron microscope observation. The III-V layers remaining on the SOI wafer after the removal process of the InP substrate show uniform photoluminescence intensity over the whole region of the chip, indicating a bonding interface without the influence of lateral etching and peeling-off. From this bonding process, Fabry-Perot lasers with III-V gain and Si waveguide regions are fabricated, and continuous-wave operation is successfully achieved at a stage temperature from 20 to 85oC. Stable operation is also confirmed from the changes of threshold current in the aging test (200 mA at 85oC) after 2,000 hours.

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III-V gain region/Si external cavity hybrid tunable lasers with InP-based two-storied ridge structure

Cited by 4 publications

References 1 publication

Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI

Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI

Silicon photonics for energy-efficient neuromorphic computing

III–V gain region/Si waveguide hybrid lasers by chip-on-wafer hydrophilic bonding process using UV-ozone treatment

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