The advanced 3D stacking technologies are discussed in this paper. They are the microbumping in 20µm pitch, the basic processes of the advanced bonding processes for the high precision and the reliable interconnections, the novel technologies to encapsulate the layered microthin gaps less than 10µm, and the non-destructive inspection. These technologies are confirmed to realize the 3D stacked LSI structure, and it will be expanded to the advanced system packaging technologies in the near future.
IntroductionNowadays, the demand for the high-density electronics component is quite general for the consumer information equipment. The new packaging technologies are required to break through the limitation of the conventional package performance [1]. The developed 3D LSI has the through-hole copper electrodes in the Si devices, which are formed by the reactive ion etching (RIE) process in 20µm pitch for the vertical wiring retributions. The substantial technologies for the 3D stacked LSI are the hyperfine interconnections of the microbumps on the through-hole electrodes and the encapsulation of the narrow gaps through the layered devices. The established results for each essential technology are introduced respectively as following.
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