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We experimentally demonstrate a giant voltage-controlled magnetic anisotropy (VCMA) coefficient in a crystallographically strained CoFe layer (>15 monolayers in thickness) in a MgO/CoFe/Ir system. We observed a strong applied voltage dependence of saturation field and an asymmetric concave behavior with giant VCMA coefficients of %758 and 1043 fJ V %1 m %1 . The result of structural analysis reveals epitaxial growth in MgO/ CoFe/Ir layers and the orientation relationship MgO(001) [110] k CoFe(001)[100] k Ir(001) [110]. The CoFe layer has a bcc structure and a tetragonal distortion due to the lattice mismatch; therefore, the CoFe layer has a large perpendicular magnetic anisotropy.

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A facility has to be located within a given region taking two criteria of equity and efficiency into account. Equity is sought by minimizing the inequality in the inhabitant-facility distances, as measured by the sum of the absolute differences between all pairs of squared Euclidean distances from inhabitants to the facility. This measure meets the Pigou-Dalton condition of transfers, and can easily be minimized. Efficiency is measured through optimizing the sum of squared inhabitant-facility distances, either to be minimized or maximized for an attracting or repellent facility respectively. Geometric localization results are obtained for the whole set of Pareto optimal solutions for each of the two resulting bicriteria problems within a convex polygonal region. A polynomial procedure is developed to obtain the full bicriteria plot, both trade-off curves and the corresponding efficient sets.