We have studied the electronic structure of the diluted magnetic semiconductor Ga 1−x Mn x N ͑x = 0.0, 0.02, and 0.042͒ grown on Sn-doped n-type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L-edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a MnN 4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga 1−x Mn x N is stronger than that in Ga 1−x Mn x As.
We show direct evidence for importance of the interface resistance to electrically create large spin accumulation in silicon (Si). With increasing the thickness of the tunnel barrier in CoFe/MgO/n+-Si devices, a marked enhancement of spin accumulation signals can be observed in the electrical Hanle-effect measurements. To demonstrate room-temperature detection of the spin signals in three-terminal methods, the influence of the spin absorption from Si into CoFe through a tunnel barrier should be taken into account.
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