Thin film transistors with high mobility and bias stability were fabricated using an In–Ga–Zn–O (IGZO)/zinc oxynitride (ZnON) tandem structure. In addition to increasing the saturation mobility from 13.44 cm2/V s to 24.75 cm2/V s, the hysteresis and device degradation under positive bias stress decreased more than five times as the ZnON semiconductor was added to the IGZO layer. These results were due to the reduced number of trapped electrons caused by the lower amount of relatively deep trap sites in the ZnON semiconductor and the existence of an energy barrier between ZnON and IGZO layers.
Indium–gallium–zinc
oxide- and zinc oxynitride-based
heterojunction phototransistors were successfully demonstrated to
control the persistent photoconduction (PPC) effect and be also responded
sensitively at the range from visible to near-infrared. ZnON plays
a key role in extending the spectral response at various frequencies
of operation. The devices show significantly different photoresponse
and photorecovery characteristics depending on the number of stacked
layers of IGZO and ZnON. After negative bias and illumination stress
was applied to the devices for 1 h, tandem-structure-based phototransistors
recovered remarkably better than single-component IGZO devices. We
suggest that the improvements to photoresponse and photorecovery result
from the presence of potential wells between two IGZO layers and the
energy band alignment of the tandem structure.
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