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Lithium phosphorus oxynitride solid-state thin-film electrolyte deposited and modified by bias sputtering and low temperature annealing J. Vac. Sci. Technol. A 28, 568 (2010); 10.1116/1.3435330Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasmaassisted metalorganic chemical vapor deposition Electron emission characteristics of boron nitride films synthesized by plasma-assisted chemical vapor deposition J.A plasma-assisted directed vapor deposition approach has been explored for the synthesis of lithium phosphorous oxynitride ͑Lipon͒ thin films. A Li 3 PO 4 source was first evaporated using a high voltage electron beam and the resulting vapor entrained in a nitrogen-doped supersonic helium gas jet and deposited on a substrate at ambient temperature. This approach failed to incorporate significant concentrations of nitrogen in the films. A hollow cathode technique was then used to create an argon plasma that enabled partial ionization of both the Li 3 PO 4 vapor and nitrogen gas just above the substrate surface. The plasma-enhanced deposition process greatly increased the gas phase and surface reactivity of the system and facilitated the synthesis and high rate deposition of amorphous Lipon films with the N / P ratios between 0.39 and 1.49. Manipulation of the plasma-enhanced process conditions also enabled control of the pore morphology and significantly affected the ionic transport properties of these films. This enabled the synthesis of electrolyte films with lithium ion conductivities in the 10 −7 -10 −8 S / m range. They appear to be well suited for thin-film battery applications.

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