Developing high-performance broadband near-infrared (NIR) phosphors for NIR phosphor-converted light-emitting diodes is still a challenge. Co-doping is an effective strategy for enhancing the performance of NIR phosphors. Herein, we explore a NIR phosphor by co-doping Yb 3+ into LiScSi 2 O 6 :Cr 3+ (LSS:Cr 3+ ). Under 468 nm excitation, LSS:Cr 3+ ,Yb 3+ exhibits a broad NIR emission from 700 to 1100 nm. Due to the efficient energy transfer from Cr 3+ to Yb 3+ , the maximum bandwidth of LSS:Cr 3+ ,Yb 3+ reaches 219 nm, broader than that of LSS:Cr 3+ (170 nm). The addition of Yb 3+ further suppresses the thermal quenching compared with that of the Cr 3+ singly doped specimen. At 150 °C, LSS:Cr 3+ ,Yb 3+ retains 62% of the emission intensity at room temperature, while that of singly doped LSS:Cr 3+ is only 40%. These results indicate that the construction of Cr 3+ → Yb 3+ energy transfer not only can broaden the emission spectrum but also can improve the thermal stability.

Cr3+‐activated Gd3Ga5O12 garnet (GGG:Cr3+) near‐infrared (NIR) phosphors have shown promising applications in regulating plant growth. However, the low external quantum efficiency (EQE) results in a wall‐plug efficiency (WPE) of phosphor‐converted light‐emitting diodes (pc)‐LEDs of only ≈15%. Herein, an easy strategy to improve the luminescent properties of the GGG:Cr3+ phosphor is reported. Through optimization of the synthesized technology, the EQE is enhanced to 43.6%. Remarkably, the fabricated pc‐LEDs achieve a WPE as high as 34.3%. These results demonstrate a significant advancement in the development and applications of NIR phosphor materials and NIR pc‐LED devices.

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