Wearable, portable, and biocompatible optoelectronic devices made of all-green and abundant materials and fabricated by low-temperature solution method are the key point in the development of next generation of intelligent optoelectronics. However, this is usually limited by the weaknesses of mono-component materials, such as non-adjustable photoresponse region, high carrier recombination rate, high signal-to-noise ratio, as well as the weak mechanical flexibility of bulk films. In this work, the Cs3Cu2I5/ZnO heterostructure flexible photodetectors were constructed by a low-temperature solution method combined with spin-coating technique. The heterostructure combines the low dark current and strong deep ultraviolet absorption of Cs3Cu2I5 quantum dots with the high carrier mobility of ZnO quantum dots as well as the efficient charge separation of the vertical p–n junction, to improve the photodetection performance. The heterostructure shows enhanced light/dark current ratio and ultraviolet-to-visible rejection ratios. Under an illumination of 280 nm light, an optical detectivity as high as 1.26 × 1011 Jones was obtained; the optical responsivity and response time are much better than those of control devices. After 300 times of 180° bending cycles, the photocurrent had no obvious change. The results demonstrate that the Cs3Cu2I5/ZnO heterostructure has great potential in wearable and portable visible-blind ultraviolet optoelectronic devices.

All inorganic perovskites have been regarded as attractive optoelectronic materials due to their tunable properties, good stability, and low-temperature processing techniques. However, the relatively low responsivity and narrow response range still hinder their potential for optoelectronic applications. In this work, vertically stacked Au/ PbS/CsPbCl 3 phototransistors were fabricated by a low-temperature solution method. The phototransistors achieved a wide spectral photodetection of 300−1100 nm. The phototransistors had an effective electron mobility of 654.75 cm 2 /V s without light illumination. Under 532 nm incident light, due to the enhancement of plasmonic Au nanoparticles, the phototransistors demonstrated a remarkable responsivity of 3892 A/ W, a high detectivity of 3.29 × 10 13 Jones, as well as an ultrahigh external quantum efficiency of 10 6 %. In addition, the phototransistors also exhibited excellent stability in air. The results demonstrate that a vertically stacked Au/PbS/CsPbCl 3 architecture is a promising candidate for broadband photodetection.

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