Cs₃Cu₂I₅/ZnO Heterostructure for Flexible Visible-Blind Ultraviolet Photodetection

Abstract

Wearable, portable, and biocompatible optoelectronic devices made of all-green and abundant materials and fabricated by low-temperature solution method are the key point in the development of next generation of intelligent optoelectronics. However, this is usually limited by the weaknesses of mono-component materials, such as non-adjustable photoresponse region, high carrier recombination rate, high signal-to-noise ratio, as well as the weak mechanical flexibility of bulk films. In this work, the Cs3Cu2I5/ZnO heterostructure flexible photodetectors were constructed by a low-temperature solution method combined with spin-coating technique. The heterostructure combines the low dark current and strong deep ultraviolet absorption of Cs3Cu2I5 quantum dots with the high carrier mobility of ZnO quantum dots as well as the efficient charge separation of the vertical p–n junction, to improve the photodetection performance. The heterostructure shows enhanced light/dark current ratio and ultraviolet-to-visible rejection ratios. Under an illumination of 280 nm light, an optical detectivity as high as 1.26 × 1011 Jones was obtained; the optical responsivity and response time are much better than those of control devices. After 300 times of 180° bending cycles, the photocurrent had no obvious change. The results demonstrate that the Cs3Cu2I5/ZnO heterostructure has great potential in wearable and portable visible-blind ultraviolet optoelectronic devices.

Woven Fibrous Photodetectors for Scalable UV Optical Communication Device

“…In photoconductive PD, the equivalent dark current derived shot noise dominates the total noise of detector, and using Equation ( 2), [30,31] the D* value is 2.09 × 10 11 Jones under 0 V at 300 nm wavelength, which is higher than previously reported Cs 3 Cu 2 I 5 /ZnO planar type devices. [32] The maximum EQE is calculated to be 11.1% under 0 V at 300 nm wavelength (Figure S4, Supporting Information). Table S1 (Supporting Information) summarizes the key optoelectronic parameters for self-powered photodetectors.…”

Recent Application and Progress of Metal Halide Perovskite Photodetector on Flexible Substrates

“…Currently, other non‐toxic or low‐toxic elements such as Sn, Bi, Cu, etc ., are commonly used in place of Pb. [ 32,56,62,64,67,96‐98 ] Thus, although halide perovskite materials have made some progress in the field of FPPDs, their industrialization still has a long way to go.…”

“…Xinhong Zhao et al . [ 62 ] dried 1‐octadecene and CuI in a nitrogen atmosphere. Then, 1 mL of oleic acid and oleamine were injected at 120 °C.…”

“…The TEM images of (a) CsSnBr 3 QDs [ 61 ] (the small image shows the size distribution of QDs) and (b) Cs 3 Cu 2 I 5 ; [ 62 ] (c) The specific synthesis scheme of FPPDs via CsPbBr 3 QDs. [ 63 ] …”

“…In 2022, Xinhong Zhao et al . [ 62 ] constructed Cs 3 Cu 2 I 5 /ZnO heterostructured FPPDs using a cryogenic solution method and a spin coating technique. This heterostructure combines the low dark current of Cs 3 Cu 2 I 5 quantum dots, strong deep ultraviolet absorption, high carrier mobility of zinc oxide quantum dots and efficient charge separation of vertical positive junction, which improves the optical detection performance of FPPDs.…”