Vertically stacked PEDOT:PSS/PbS/CsPbCl3 for flexible optoelectronic devices

Zhao, Xiuge; Li, Kai; Fang, Yongchu; Tao, Yu; Song, Xiaoxian; Zhang, Haiting; Yu, Huaqing; Yan, Zaoxue

doi:10.1016/j.jallcom.2021.158997

Cited by 13 publications

(6 citation statements)

References 33 publications

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“…Meanwhile, the strategy of integrating perovskite with NIR absorption materials (e.g., organic bulk heterojunction (BHJ), lead sulfide quantum dots, etc.) was attempted to expand the spectral response range of PDs to the NIR region 32 – 34 . For example, Chen et al achieved broadband photodetectors with high NIR external quantum efficiency of over 70% in organic-inorganic perovskite/BHJ hybrid 35 .…”

Section: Introductionmentioning

confidence: 99%

A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

Ding

et al. 2022

Light Sci Appl

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Broadband photodetection (PD) covering the deep ultraviolet to near-infrared (200–1000 nm) range is significant and desirable for various optoelectronic designs. Herein, we employ ultraviolet (UV) luminescent concentrators (LC), iodine-based perovskite quantum dots (PQDs), and organic bulk heterojunction (BHJ) as the UV, visible, and near-infrared (NIR) photosensitive layers, respectively, to construct a broadband heterojunction PD. Firstly, experimental and theoretical results reveal that optoelectronic properties and stability of CsPbI3 PQDs are significantly improved through Er3+ doping, owing to the reduced defect density, improved charge mobility, increased formation energy, tolerance factor, etc. The narrow bandgap of CsPbI3:Er3+ PQDs serves as a visible photosensitive layer of PD. Secondly, considering the matchable energy bandgap, the BHJ (BTP-4Cl: PBDB-TF) is selected as to NIR absorption layer to fabricate the hybrid structure with CsPbI3:Er3+ PQDs. Thirdly, UV LC converts the UV light (200–400 nm) to visible light (400–700 nm), which is further absorbed by CsPbI3:Er3+ PQDs. In contrast with other perovskites PDs and commercial Si PDs, our PD presents a relatively wide response range and high detectivity especially in UV and NIR regions (two orders of magnitude increase that of commercial Si PDs). Furthermore, the PD also demonstrates significantly enhanced air- and UV- stability, and the photocurrent of the device maintains 81.5% of the original one after 5000 cycles. This work highlights a new attempt for designing broadband PDs, which has application potential in optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

Ding

et al. 2022

Light Sci Appl

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“…To solve the problems, perovskites have been often used to treat the surface of QDs to form a perovskite/QD heterojunction to improve the performance of PDs. 10,[44][45][46] Perovskites have a high carrier mobility, wide adjustable bandgap, and strong light absorption in the UV-visible region, which has attracted great attention in photoelectric applications. In addition, the preparation method of perovskite materials is simple.…”

Section: Zero-dimensional (0d) Nanomaterialsmentioning

confidence: 99%

Fabrication, material regulation, and healthcare applications of flexible photodetectors

et al. 2022

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“…Due to the extremely low solubility of the CsCl precursor in existing solvents, almost all of the CsPbCl 3 photodetectors previously reported are composed of CsPbCl 3 micro- − or nanostructures, − whereas the preparation of a high-quality CsPbCl 3 polycrystalline film still remains a big challenge. The research studies on CsPbCl 3 photodetector started late compared to other types of perovskite photodetectors.…”

Section: Introductionmentioning

confidence: 99%

“…The flexible UV photodetector based on this structure yielded a high detectivity ( D *) of 9 × 10 14 Jones but the response speed was still slow (28/31 ms). To further enhance the UV detection performance of CsPbCl 3 NC-based devices, interface modification by PbS quantum dots and 3-mercaptopropionic acid, etc., was employed by some groups. − Although the stability of the devices was enhanced, the detection performance was still unsatisfactory even under a high bias voltage. Given that the narrow-band-gap PbS quantum dots layer exhibited a good response to the visible and near-infrared light signals, it could act as a visible light absorber.…”

Section: Introductionmentioning

confidence: 99%

“…To further enhance the UV detection performance of CsPbCl 3 NC-based devices, interface modification by PbS quantum dots and 3-mercaptopropionic acid, etc., was employed by some groups. − Although the stability of the devices was enhanced, the detection performance was still unsatisfactory even under a high bias voltage. Given that the narrow-band-gap PbS quantum dots layer exhibited a good response to the visible and near-infrared light signals, it could act as a visible light absorber. Thus, the insertion of the PbS quantum dot layer would undesirably decrease the selectivity to UV signals and restrict their application scenarios.…”

Section: Introductionmentioning

confidence: 99%

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Boosting the Performance of Self-Powered CsPbCl₃-Based UV Photodetectors by a Sequential Vapor-Deposition Strategy and Heterojunction Engineering

Zhan

Zhang

et al. 2021

ACS Appl. Mater. Interfaces

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All-inorganic CsPbCl 3 perovskite in ultraviolet (UV) detection is drawing increasing interest owing to its UVmatchable optical band gap, ultrahigh UV stability, and superior inherent optoelectronic properties. Almost all of the reported CsPbCl 3 photodetectors employ CsPbCl 3 nano-or microstructures as sensitive components, while CsPbCl 3 polycrystalline filmbased self-powered photodetectors are rarely studied on account of the terrible precursor solubility. Herein, a novel sequential vapordeposition technique is demonstrated to fabricate CsPbCl 3 polycrystalline film for the first time. High-quality CsPbCl 3 films with excellent optical, electronic, and morphological features are obtained. A self-powered photodetector based on the CsPbCl 3 film is constructed without any charge transport layer, showing a high UV detection performance. A thin p-type PbS buffer layer is further introduced to passivate the surface defects of the CsPbCl 3 layer and decrease the interfacial energy barrier by forming a type-II heterojunction, contributing to a faster hole extraction rate and a suppressed dark current level. The best-performing device achieves an ultrafast response time of 1.92 μs, an ultrahigh on/off ratio of 2.22 × 10 5 , and a responsivity of 0.22 A/W upon 375 nm UV illumination at 0 V bias. This comprehensive performance is the best among all of the CsPbCl 3 photodetectors reported to date. The as-prepared photodetectors also present an eminent UV irradiation and long-term durability in ambient air. Furthermore, a largearea and uniform 625-pixel UV image sensor is fabricated and attains a prominent imaging capability. Our work opens a new avenue for the scalable production of CsPbCl 3 -based optoelectronics.

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Vertically stacked PEDOT:PSS/PbS/CsPbCl3 for flexible optoelectronic devices

Cited by 13 publications

References 33 publications

A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

Fabrication, material regulation, and healthcare applications of flexible photodetectors

Boosting the Performance of Self-Powered CsPbCl₃-Based UV Photodetectors by a Sequential Vapor-Deposition Strategy and Heterojunction Engineering

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Vertically stacked PEDOT:PSS/PbS/CsPbCl3 for flexible optoelectronic devices

Cited by 13 publications

References 33 publications

A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

Fabrication, material regulation, and healthcare applications of flexible photodetectors

Boosting the Performance of Self-Powered CsPbCl3-Based UV Photodetectors by a Sequential Vapor-Deposition Strategy and Heterojunction Engineering

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Boosting the Performance of Self-Powered CsPbCl₃-Based UV Photodetectors by a Sequential Vapor-Deposition Strategy and Heterojunction Engineering