There is growing interest in microLED devices with lateral dimensions between 1 and 10 μm. However, reductions in external quantum efficiency (EQE) due to increased nonradiative recombination at the surface become an issue at these sizes. Previous attempts to study size-dependent EQE trends have been limited to dimensions above 5 μm, partly due to fabrication challenges. Here, we present size-dependent EQE data for InGaN microLEDs down to 1 μm in diameter fabricated using a process that only utilizes standard semiconductor processing techniques (i.e., lithography and etching). Furthermore, differences in EQE trends for blue and green InGaN microLEDs are compared. Green wavelength devices prove to be less susceptible to reductions in efficiency with the decreasing size; consequently, green devices attain higher EQEs than blue devices below 10 μm despite lower internal quantum efficiencies in the bulk material. This is explained by smaller surface recombination velocities with the increasing indium content due to enhanced carrier localization.

Permeability is the ability of a material to transmit fluid/gases. It is an important material property and it depends on mould parameters such as grain fineness number, clay, moisture, mulling time, and hardness. Modeling the relationships among these variable and interactions by mathematical models is complex. Hence a biologically inspired artificial neural-network technique with a back-propagation-learning algorithm was developed to estimate the permeability of green sand. The developed model was used to perform a sensitivity analysis to estimate permeability. The individual as well as the combined influence of mould parameters on permeability were simulated. The model was able to describe the complex relationships in the system. The optimum process window for maximum permeability was obtained as 8.75-10.5% clay and 3.9-9.5% moisture. The developed model is very useful in understanding various interactions between inputs and their effects on permeability.

The optical and electrical characteristics of InGaN blue and green micro-light-emitting diodes (μLEDs) with GaN tunnel junction (TJ) contacts grown by metalorganic chemical vapor deposition (MOCVD) were compared at different activation temperatures among three activation methods from the literature, namely, sidewall activation, selective area growth (SAG), and chemical treatment before sidewall activation. The devices with chemical treatment before activation resulted in uniform electroluminescence and higher light output power, compared to the devices with sidewall activation and SAG. Moreover, the green μLEDs showed greater optical degradation at elevated activation temperatures, whereas the blue μLEDs yielded trivial difference with activation temperatures from 670 to 790 °C. The 5 × 5 μm2 devices with chemical treatment before activation and SAG yielded almost identical voltage at 20 A/cm2, and the voltage penalty significantly decreased with activation temperature in the case of devices with sidewall activation. The devices with chemical treatment before activation resulted in higher external quantum efficiency (EQE) and wall-plug efficiency (WPE) in low current density range compared to the devices with SAG. The enhancements in EQE and WPE were observed in different μLED sizes, suggesting that chemical treatment before sidewall activation enables the use of TJ contacts grown by MOCVD and is advantageous for applications that require high brightness and efficiency.

In this paper, we designed and fabricated waveguide voltage controlled oscillator (VCO), which have a center frequency of 94 GHz using the GaAs Gunn diode, varactor diode, and two bias posts with low pass filter (LPF). The cavity is designed for fundamental mode at 47 GHz and operated second harmonic VCO of 94GHz center frequency. The fabricated VCO has 1.74 GHz bandwidth, 671MHz linearity for 2.28% and 14 dBm output power. The highest output power is 15.58dBm at 94.38 GHz

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