We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial siliconon-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the 1.1-1.55 μm range, spanning the O and C telecom bands. We analyze their photoluminescence spectra, dipolar emissions, and optical relaxation dynamics at 10 K. For a specific family, we show a constant emission intensity at saturation from 10 K to temperatures well above the 77 K liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these individual artificial atoms are promising systems to investigate for Si-based quantum technologies.
Controlling
the quantum properties of individual fluorescent defects
in silicon is a key challenge toward large-scale advanced quantum
photonic devices. Research efforts have so far focused on extrinsic
defects based on impurities incorporated inside the silicon lattice.
Here, we demonstrate the detection of single intrinsic defects in
silicon, which are linked to a tri-interstitial complex called the
W-center, with a zero-phonon line at 1.218 μm. Investigating
their single-photon emission properties reveals new information about
this common radiation damage center, such as its dipolar orientation
and its photophysics. We also identify its microscopic structure and
show that, although this defect does not feature electronic states
in the bandgap, Coulomb interactions lead to excitonic radiative recombination
below the silicon bandgap. These results could set the stage for numerous
quantum perspectives based on intrinsic luminescent defects in silicon,
such as integrated quantum photonics and quantum communications.
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