Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon

Durand, A.; Baron, Yoann; Redjem, Walid; Herzig, Tobias; Benali, Abdennacer; Pezzagna, Sébastien; Meijer, Jan; Kuznetsov, A. Yu.; Gérard, Jean‐Michel; Robert-Philip, I.; Abbarchi, Marco; Jacques, Vincent; Cassabois, Guillaume; Dréau, A.

doi:10.1103/physrevlett.126.083602

Cited by 76 publications

(65 citation statements)

References 35 publications

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“…The W and G centers exhibit some of the brightest emission of any SECs, and are promising as SPSs. In the past year, first measurements of single-photon emission from G centers have been reported [116,117], and single SECs across the telecom wavelength range have also been observed in carbon-implanted silicon [118]. A silicon photonic spin-donor qubit quantum computing platform has recently been proposed [119], with the idea of using photonic coupling between chalcogenide spin qubits in silicon (figure 17(ii)).…”

Section: Statusmentioning

confidence: 99%

“…The emission from single G centers that has been observed so far showed strong inhomogenous broadening. Ion implantation processes may generate many different types of SECs, offering opportunities but also challenges to develop processes that only create the SECs of interest [118]. For many applications, placement of individual SECs will also be necessary.…”

Section: Current and Future Challengesmentioning

confidence: 99%

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2022 Roadmap on integrated quantum photonics

et al. 2022

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Integrated photonics will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying optical quantum technologies can only be realized through the integration of these components onto quantum photonic integrated circuits (QPICs) with accompanying electronics. In the last decade, remarkable advances in quantum photonic integration have enabled table-top experiments to be scaled down to prototype chips with improvements in efficiency, robustness, and key performance metrics. These advances have enabled integrated quantum photonic technologies combining up to 650 optical and electrical components onto a single chip that are capable of programmable quantum information processing, chip-to-chip networking, hybrid quantum system integration, and high-speed communications. In this roadmap article, we highlight the status, current and future challenges, and emerging technologies in several key research areas in integrated quantum photonics, including photonic platforms, quantum and classical light sources, quantum frequency conversion, integrated detectors, and applications in computing, communications, and sensing. With advances in materials, photonic design architectures, fabrication and integration processes, packaging, and testing and benchmarking, in the next decade we can expect a transition from single- and few-function prototypes to large-scale integration of multi-functional and reconfigurable devices that will have a transformative impact on quantum information science and engineering.

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Section: Statusmentioning

confidence: 99%

Section: Current and Future Challengesmentioning

confidence: 99%

2022 Roadmap on integrated quantum photonics

et al. 2022

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“…An additional example can be found in silicon, where Ref. [70] recently identified new SPEs in the telecom range. Among them is a defect center labeled SD-2, the ZPL of which is always split into three portions separated by 3 meV.…”

Section: B Dynamic Jahn-teller Effectmentioning

confidence: 99%

Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide

Bathen

Galeckas²,

Karsthof³

et al. 2021

Phys. Rev. B

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Point defects in semiconductors are promising single-photon emitters (SPEs) for quantum computing, communication and sensing applications. However, factors such as emission brightness, purity and indistinguishability are limited by interactions between localized defect states and the surrounding environment. Therefore, it is important to map the full emission spectrum from each SPE, to understand the complex interplay between the different defect configurations, their surroundings and external perturbations. Herein, we investigate a family of regularly spaced sharp luminescence peaks appearing in the near-infrared portion of photoluminescence (PL) spectra from n-type 4H-SiC samples after irradiation. This periodic emitter family, labeled the L-lines, is only observed when the zero-phonon line signatures of the negatively charged Si vacancy (so-called V-lines) are present. The L-lines appear with 1.45 meV and 1.59 meV energy spacing after H and He irradiation and increase linearly in intensity with fluence -reminiscent of the intrinsic defect trend. Furthermore, we monitor the dependence of the L-line emission energy and intensity on heat treatments, electric field strength and PL collection temperature, discussing these data in the context of the L-lines. Based on the strong similarity between the irradiation, electric field and thermal responses of the L-and V-lines, the L-lines are attributed to the Si vacancy in 4H-SiC. The regular and periodic appearance of the L-lines provides strong arguments for a vibronic origin explaining the oscillatory multi-peak spectrum. To account for the small energy separation of the L-lines, we propose a model based on rotations of distortion surrounding the Si vacancy driven by a dynamic Jahn-Teller effect.

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“…Besides the diamond NV − center, the color centers in narrow or wide bandgap materials like silicon, SiC, and diamond had also been intensively studied. [12,71,72] These sources have emissions ranging from UV to IR and enable applications like quantum communications, quantum computation, quantum sensing, and quantum metrology. These applications are closely linked to the two common energy structures of color centers for the S = 1 and S = 1/2 system, respectively (Figure 1).…”

Section: Vacancy Color Centersmentioning

confidence: 99%

Room‐Temperature Solid‐State Quantum Emitters in the Telecom Range

et al. 2021

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Building a quantum network is the ultimate goal of quantum information science. Among the candidates to realize quantum node, quantum repeater, and quantum channel, the solid-state emitters are particularly outstanding because of the presence of the spin-photon interface. Some of the solid-state emitters such as carbon nanotubes, color centers, transition metal ions, and rare earth ions can give telecom wavelength emission at room temperature. These emitters have different origins of single-photon emission. Here, the basic properties of each kind of emitter and their progress towards applications are reviewed. This review also introduces the current efforts to improve the emitters' brightness by integrating them into nanostructures.

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Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon

Cited by 76 publications

References 35 publications

2022 Roadmap on integrated quantum photonics

2022 Roadmap on integrated quantum photonics

Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide

Room‐Temperature Solid‐State Quantum Emitters in the Telecom Range

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