Reconfigurable silicon photonic devices are widely used in numerous emerging fields such as optical interconnects, photonic neural networks, quantum computing, and microwave photonics. Currently, phase change materials (PCMs) have been extensively investigated as promising candidates for building switching units due to their strong refractive index modulation. Here, nonvolatile multilevel switching of silicon photonic devices with Ge2Sb2Te5 (GST) is demonstrated with In2O3 transparent microheaters that are compatible with diverse material platforms. With GST integrated on the silicon photonic waveguides and Mach‐Zehnder interferometers (MZIs), repeatable and reversible multilevel modulation of GST is achieved by electro‐thermally induced phase transitions. Particularly, the segmented switching unit of In2O3 and GST is proposed and demonstrated to be capable of producing about one order of magnitude larger temperature gradient than that of the nonsegmented unit, resulting in up to 64 distinguishable switching levels of 6‐bit precision, and fine‐tuning of the switching voltage pulses is promising to push the precision even further, to 7‐bit, or 128 distinguishable switching levels. The capability of precise multilevel phase‐change modulation is crucial to further facilitate the development of nonvolatile reconfigurable switches and variable attenuation devices as building blocks in large‐scale programmable optoelectronic systems.
Fast electro-optic modulators with an ultracompact footprint and low power consumption are always highly desired for optical interconnects. Here we propose and demonstrate a high-performance lithium niobate electro-optic modulator based on a new
2
×
2
Fabry–Perot cavity. In this structure, the input and reflected beams are separated by introducing asymmetric multimode-waveguide gratings, enabling
TE
0
−
TE
1
mode conversion. The measured results indicate that the fabricated modulator features a low excess loss of
∼
0.9
dB
, a high extinction ratio of
∼
21
dB
, a compact footprint of
∼
2120
μm
2
, and high modulation speeds of 40 Gbps OOK and 80 Gbps PAM4 signals. The demonstrated modulator is promising for high-speed data transmission and signal processing.
Optical communication wavelength is being extended from the near-infrared band of 1.31/1.55 µm to the mid-infrared band of 2 µm or beyond for satisfying the increasing demands for high-capacity long-distance data transmissions. An efficient electro-optic (EO) modulator working at 2 µm is highly desired as one of the indispensable elements for optical systems. Lithium niobate (LiNbO3) with a large second-order nonlinear coefficient is widely used in various EO modulators. Here, we experimentally demonstrate the first Mach-Zehnder EO modulator working at 2 µm based on the emerging thin-film LiNbO3 platform. The demonstrated device exhibits a voltage-length product of 3.67 V·cm and a 3-dB-bandwidth of >22 GHz which is limited by the 18 GHz response bandwidth of the photodetector available in the lab. Open eye-diagrams of the 25 Gb/s on-off keying (OOK) signals modulated by the fabricated Mach-Zehnder EO modulator is also measured experimentally with a SNR of about 14 dB.
A high-performance optical filter is proposed and realized with multimode waveguide grating (MWG) and two-mode multiplexers on the x-cut lithium-niobate-on-insulator (LNOI) platform for the first time, to the best of our knowledge. The present optical filter is designed appropriately to avoid material anisotropy as well as mode hybridness, and has a low excess loss of 0.05 dB and a high sidelobe suppression ratio (SLSR) of 32 dB in theory with Gaussian apodization. The fabricated filters show a box-like response with 1-dB bandwidth of 6–23 nm, excess loss of ∼0.15 dB, sidelobe suppression ratio of >26 dB. The device performance is further improved with a sidelobe suppression ratio as high as 48 dB and a low excess loss of ∼0.25 dB by cascading two identical MWGs.
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