A low-power NPN-based bandgap voltage reference (BGR) over an ultra-wide
temperature range is presented. The conventional NPN-based BGRs cannot
maintain a low-temperature coefficient (TC) over an ultra-wide
temperature range due to the inherent substrate leakage current of the
NPN bipolar junction transistors (BJT) in the high-temperature range.
This work introduces a new NPN-based BGR unaffected by substrate leakage
current and receives low TC over the range of -40℃ to 150℃. The proposed
circuit was fabricated in a 180 nm CMOS process. It consumes 2uA from a
4V power supply, and its average TC is 14.89ppm/℃. Also, the average
line sensitivity is 0.039%/V.
A low-power negative-positive-negative (NPN)-based bandgap voltage reference (BGR) over an ultra-wide temperature range is presented. The conventional NPN-based BGRs cannot maintain a low-temperature coefficient (TC) with low power consumption in an ultra-wide temperature range due to its inherent reverse junction saturation current of NPN bipolar junction transistors (BJT) in the high-temperature range. This work introduces a new NPN-based BGR unaffected by such saturation current. Based on Vanguard International Semiconductor Corporation (VIS) 0.18 μm/0.15 μm complementary metal oxide semiconductor (CMOS) Bipolar-CMOS-DMOS (BCD) process, the BGR receives the best 1.25-mV deviation over the temperature range of −40°C to 150°C, much less than 38.5 mV from Brokaw-type BGR. Meanwhile, the proposed BGR with the stacked NPNs for higher output voltage was fabricated. It consumes about 2 uA from a 5-V power supply, and its average temperature coefficient is 14.89 ppm/°C. Also, the average line sensitivity is 0.039%/V.
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