A low‐power NPN‐based band‐gap voltage reference in an ultra‐wide temperature range

Abstract

A low-power negative-positive-negative (NPN)-based bandgap voltage reference (BGR) over an ultra-wide temperature range is presented. The conventional NPN-based BGRs cannot maintain a low-temperature coefficient (TC) with low power consumption in an ultra-wide temperature range due to its inherent reverse junction saturation current of NPN bipolar junction transistors (BJT) in the high-temperature range. This work introduces a new NPN-based BGR unaffected by such saturation current. Based on Vanguard International Semiconductor Corporation (VIS) 0.18 μm/0.15 μm complementary metal oxide semiconductor (CMOS) Bipolar-CMOS-DMOS (BCD) process, the BGR receives the best 1.25-mV deviation over the temperature range of −40°C to 150°C, much less than 38.5 mV from Brokaw-type BGR. Meanwhile, the proposed BGR with the stacked NPNs for higher output voltage was fabricated. It consumes about 2 uA from a 5-V power supply, and its average temperature coefficient is 14.89 ppm/°C. Also, the average line sensitivity is 0.039%/V.

A 0.84-μA bandgap for high step-down DC-DC convertors with thermal compensation and protection

“…Therefore, the BGR module within the chip must also be adapted to function in a more rigorous environment. The design of highperformance bandgap reference circuits involves several significant difficulties and challenges, as various factors have the potential to cause circuit failure [9,10,11,12,13,14,15,16]. a) First, the relationship between the temperature and the VBE of the bipolar junction is not exactly linear.…”