The fast‐growing amount of data that is produced every year creates an urgent need for ultracapacity storage media. However, 2D spatial resolution in the conventional optical data storage media has almost reached the limit. Further enlargement of storage capacity may rely on the development of the next‐generation data storage materials containing multiplexed information dimensions. Herein, a series of novel deep‐trap persistent luminescence materials (Sr1‐xBax)Si2O2N2:Eu/Yb,Dy with multicolor emissions in the whole visible region is developed and demonstrated a bit‐by‐bit optical data storage and readout strategy based on photon trapping and detrapping processes in these materials. Optical data can be handily encoded on a flexible film by a commercially available 405 nm laser and decoded by heating or by 980 nm laser scanning. The decoded information contains tunable spectral characteristics, which allows for the emission–intensity–multiplexing or emission–wavelength–multiplexing. The storage and readout strategy not only shows a great promise in the application of multidimensional rewritable optical data storage, but also opens new opportunities for advanced display technology and information security system.

CsPbBr perovskite quantum dots (PQDs)/ethylene vinyl acetate (EVA) composite films were prepared via a one-step method; on the basis of this, both supersaturated recrystallization of CsPbBr PQDs and dissolution of EVA were realized in toluene. The prepared films display outstanding green-emitting performance with high color purity of 92% and photoluminescence (PL) quantum yield of 40.5% at appropriate CsPbBr PQD loading. They possess long-term stable luminescent properties in the air and in water, benefiting from the effective protection of CsPbBr PQDs by the EVA matrix. Besides, the prepared CsPbBr PQDs/EVA films are flexible enough to be repeatedly bent for 1000 cycles while keeping unchanged the PL intensity. The optical properties of the CsPbBr PQDs/EVA films in white light-emitting diodes were also studied by experiments and theoretical simulation. Overall, facile preparation process, good long-term stability, and high flexibility allow our green-emitting CsPbBr PQDs/EVA films to be applied in lighting applications and flexible displays.

Deep-trap persistent luminescence materials exhibit unique properties of energy storage and controllable photon release under additional stimulation, allowing for both wavelength and intensity multiplexing to realize high-capacity storage in the next-generation information storage system. However, the lack of suitable persistent luminescence materials with deep traps is the bottleneck of such storage technologies. In this study, we successfully developed a series of novel deep-trap persistent luminescence materials in the Ln/Ln-doped SrSiON system (Ln = Yb, Eu; Ln = Dy, Ho, Er) by applying the strategy of trap depth engineering. Interestingly, the trap depth can be tailored by selecting different codopants, and it monotonically increases from 0.90 to 1.18 eV in the order of Er, Ho, and Dy. This is well explained by the energy levels indicated in the host-referred binding energy scheme. The orange-red-emitting SrSiON:Yb,Dy and green-emitting SrSiON:Eu,Dy phosphors are demonstrated to be good candidates of information storage materials, which are attributed to their deep traps, narrow thermoluminescence glow bands, high emission efficiency, and excellent chemical stability. This work not only validates the suitability of deep-trap persistent luminescence materials in the information storage applications, but also broadens the avenue to explore such kinds of new materials for applications in anticounterfeiting and advanced displays.

The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201808024. Photodynamic TherapyAs a powerful therapeutic methodology used for over a century, radiotherapy (RT) has garnered much attention in clinical use. [1] However, the efficacy of RT has been limited due to its toxic

Herein, we report highly bright and stable CsPbI 3 (CPI) perovskite quantum dots (PQDs) synthesized with trimethylsilyl iodine (TMSI) under a reaction circumstance with the I/Pb molar ratio of ∼4.2. The obtained CPI (TMSI-CPI) PQDs show near-unity photoluminescence quantum yields (PLQYs) in solution and high stability (only 9% loss in PLQY after 105 day storage) under ambient and dark conditions. The thermal stability of TMSI-CPI PQDs is also improved: the degradation temperature is higher than that of traditional hot-injection-synthesized CPI (Tra-CPI) PQDs. X-ray photoelectron spectroscopy results show that the TMSI-CPI PQDs have a highly iodine-rich surface (the I/Pb atomic ratio is up to 4.4), which is believed to be responsible for such high stability and PLQYs. Further, the size and surface properties of CPI PQDs can be easily adjusted by changing the amount of TMSI. Finally, we fabricated QDs-based light-emitting diodes (QLEDs) utilizing TMSI-CPI PQDs as an emissive layer showing a maximum luminance of 365 cd m −2 and external quantum efficiency of 1.8%. During a working period of 2 h, no shift and broadening of the electroluminescence spectra happen for TMSI-CPI-based QLEDs with an initial luminance of 100 cd m −2 ; the device lifetime for which the luminance drops to half of its initial value (100 cd m −2 ) reaches 3.11 h, which is nearly 7 times longer than that of Tra-CPI-based QLEDs.