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Developing a high energy density micro-supercapacitor still remains a big challenge. In this paper, a two-dimensional (2D) CoMoO ultrathin nanosheet (NS)-based asymmetric supercapacitor (ASC) is fabricated. It is found that the CoMoO NS electrode processes a high specific capacitance (153.2 F g) at a current density of 1 mA cm and this ASC can deliver an energy density of 0.313 mWh cm at a power density of 80 mW cm, which is higher than that reported in the literature. Moreover, the ASC can drive a light emitting diode (3 mm diameter, red) to work for 6 min after being charged for 10 s. After 5000 cycles, 77.37% of capacitance still remains. We maintain that the ultrathin thickness can significantly shorten the diffusion paths for both electrons and ions, thus leading to fast electron transport and ion diffusion rates. Our results demonstrate that 2D ultrathin NSs could be a new, promising candidate for energy conversion/storage devices, which could offer more accommodating sites for ion intercalation.

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Today, research is increasingly focused on surface control of semiconductors; however, very little is known about the effect of bulk chemical bonds on photoelectrochemistry properties. In this report, Bi2O(OH)2SO4 with and without specific Bi-O-S bonds (WB and WOB) is synthesized via hydrothermal and water bath methods, respectively, and we reveal the Bi-O-S bond-dependent photoelectrochemistry properties. Both WB and WOB belong to a monoclinic space group (P21/c), but the newly synthesized WB has different unit cell parameters of a = 8.062 Å, b = 8.384 Å, and c = 5.881 Å, compared with WOB (a = 7.692(3) Å, b = 13.87(1) Å, c = 5.688(2) Å). Compared with WOB (4.18 eV), WB has a narrower band gap (3.6 eV), higher electrical conductivity, and an increased charge separation efficiency. It is found that the electrons are easy to transfer along the newly formed Bi-O-S bond in bulk; thus, the Bi-O-S bonds in WB have efficiently improved the photoelectrochemistry properties. As a result, WB exhibits a 1.1 times higher photocatalytic activity than WOB for the degradation of RhB under ultraviolet light irradiation (<420 nm). This helps us to understand the photoelectrochemistry properties from crystal bulk, but not merely from the crystal surface; thus, this study provides a new idea for improved photoelectrochemistry properties of semiconductors.