2019
DOI: 10.1016/j.jallcom.2019.04.239
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Controllable synthesis and efficient photocatalytic activity of BiOF nanodisks exposed with {101} facets, instead of {001} facets

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Cited by 17 publications
(5 citation statements)
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“…As shown in Figure 3a, for Bi1F1, the binding energy of Bi 4f 5/2 and Bi 4f 7/2 is ≈0.4 eV lower than that of Bi1F3, suggesting a lower valence state or a higher electron cloud density of Bi in Bi1F1 than in Bi1F3. [46] In addition, as shown by the O 1s core-level XPS results, the Bi-O bond is clearly formed at ≈530 eV, which is consistent with the conclusion that the formed crystal is BiO x F y (Figure 3a). Moreover, compared with Bi1F3, both the binding energy of the Bi-O bond and the Bi-F bond of Bi1F1 have moved to a lower position by ≈0.28 eV (Figure 3b,c).…”
Section: Resultssupporting
confidence: 85%
“…As shown in Figure 3a, for Bi1F1, the binding energy of Bi 4f 5/2 and Bi 4f 7/2 is ≈0.4 eV lower than that of Bi1F3, suggesting a lower valence state or a higher electron cloud density of Bi in Bi1F1 than in Bi1F3. [46] In addition, as shown by the O 1s core-level XPS results, the Bi-O bond is clearly formed at ≈530 eV, which is consistent with the conclusion that the formed crystal is BiO x F y (Figure 3a). Moreover, compared with Bi1F3, both the binding energy of the Bi-O bond and the Bi-F bond of Bi1F1 have moved to a lower position by ≈0.28 eV (Figure 3b,c).…”
Section: Resultssupporting
confidence: 85%
“…[47] To study the influence of the monolayer interface on the formation of heterostructures, we also calculated the electronic properties of BiOF(001), CdS(001) and g-C 3 N 4 (001), corresponding to CdS(001) maintain direct band gaps, and the band gap values are 3.877 eV and 2.698 eV, respectively, which are larger than the band gap of the bulk element, which has a small error between the previous research results. [48,49] The calculation results show that the band gap of g-C 3 N 4 (001) is 2.801 eV, like bulk g-C 3 N 4 , it belongs to the indirect bandgap semiconductor, which is consistent with the conclusions obtained by previous studies. [50] 2.a), which is consistent with the previous literature.…”
Section: Electronic Propertiessupporting
confidence: 89%
“…The X‐ray diffractometry (XRD) was used to study the crystal structure of BiOF, BiF 3 , and Bi 2 O 3 , and the comparison was made with the standard card of JCPDS#86‐1648, JCPDS#73‐1988, and JCPDS#29‐0236, respectively (Figure 1b). [ 12 ] All the diffraction peaks were attributed to the standard card number, and no impurity peak was detected. The main peaks in BiOF are located at 10°, 27.2°, and 30°, respectively, corresponding to the crystal plane of (001), (101), and (002) in the standard card.…”
Section: Resultsmentioning
confidence: 99%