Due
to their small size and low power consumption, two-dimensional
(2D) MoS2 devices have emerged as attractive candidates
for next-generation nanoelectronics. However, in some particular working
environments, such as space applications or advanced nuclear energy
systems, device degradation caused by ion irradiation is a huge challenge
for practical applications. Herein, the irradiation resistance of
single-layer and multilayer MoS2 field effect transistors
(FETs) have been systematically studied by using 2 MeV He ions.
Electrical measurements show that multilayer devices can withstand
3 × 1012 cm–2 fluence of He ion
irradiation, which is at least an order of magnitude higher than that
of single-layer devices. Raman and photoluminescence (PL) spectra
indicate that the defect concentration in multilayer devices is less
than that of single-layer devices, even if the irradiation dose is
two orders of magnitude higher, since the displacement threshold energy
of Mo and S atoms significantly increases with the increasing number
of MoS2 layers. The defect configuration is directly observed
by aberration-corrected scanning transmission electron microscopy
(AC-STEM). Our results demonstrate the extraordinary resistance of
multilayer MoS2 FETs under high irradiation conditions
and expand their potential applications.
The collection of photogenerated electrons is an essential part of the photoelectrochemical process on a semiconductor photoanode, which is often a bottleneck in a particulate photoanode. Herein, by ingeniously inserting...
Electronic devices based on two-dimensional materials
are promising
for application in space instrumentation because of their small size
and low power consumption, and irradiation tolerance of these devices
is required because of the existence of energetic particles in aerospace
conditions. We investigate the performance degradation of graphene
field effect transistors (GFETs) with 3 MeV protons by using an in
situ irradiation facility. Our results indicate that GFET performance
degraded severely at the ion fluence of 8 × 1011 cm
–2. Surprisingly, although the performance
of the proton-irradiated GFETs is difficult to recover in vacuum,
it can nearly completely recover within hours when the GFET is moved
into an air environment, indicating that the performance change is
due to the charge accumulation in SiO2 under proton irradiation
rather than the lattice damage of graphene. Our results have great
importance for the application of 2D devices in aerospace and other
radiative environments.
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