Electronic Properties of Multilayer MoS₂ Field Effect Transistor with Unique Irradiation Resistance

Abstract

Due to their small size and low power consumption, two-dimensional (2D) MoS2 devices have emerged as attractive candidates for next-generation nanoelectronics. However, in some particular working environments, such as space applications or advanced nuclear energy systems, device degradation caused by ion irradiation is a huge challenge for practical applications. Herein, the irradiation resistance of single-layer and multilayer MoS2 field effect transistors (FETs) have been systematically studied by using 2 MeV He ions. Electrical measurements show that multilayer devices can withstand 3 × 1012 cm–2 fluence of He ion irradiation, which is at least an order of magnitude higher than that of single-layer devices. Raman and photoluminescence (PL) spectra indicate that the defect concentration in multilayer devices is less than that of single-layer devices, even if the irradiation dose is two orders of magnitude higher, since the displacement threshold energy of Mo and S atoms significantly increases with the increasing number of MoS2 layers. The defect configuration is directly observed by aberration-corrected scanning transmission electron microscopy (AC-STEM). Our results demonstrate the extraordinary resistance of multilayer MoS2 FETs under high irradiation conditions and expand their potential applications.

Advances in Perovskites for Photovoltaic Applications in Space

“…In recent years, 2D materials-based devices, such as transistors, sensors, etc ., have been proposed as future technologies for space applications because of their low weight, small size, and low power requirements. Indeed, several groups demonstrated the radiation resistance of such 2D materials-based systems, paving the way for their use in extra-terrestrial environments. − Thus, 2D materials (i) are being used for boosting/improving the performance of PSCs in terrestrial conditions and (ii) show a resistance to radiation that can be exploited for the realization of electronic devices/components used in the space environment. Consequently, we believe that the synergistic use of 2D materials within PSCs can be a promising strategy to produce efficient and reliable next-generation PV technologies .…”

Solar Energy in Space Applications: Review and Technology Perspectives

“…Recently, Zhang et al. [ 182 ] studied the radiation resistance of single‐ and multilayer MoS 2 FETs under another type of common irradiation source in space environment, i.e., He ions. By using 2 MeV He + irradiation it was found that single‐layer MoS 2 devices showed significant degradation with fluence of 10 11 particles cm −2 .…”

“…The authors demonstrated that, after the irradiation with proton and electron doses of, respectively, 10 12 and 10 16 particles cm −2 (which are equivalent to those accumulated after 10 3 years of exposure at 500 km altitude), the devices did not experience any significant changes in their performances (assuming an Al shield of 1.85 nm of thickness). Recently, Zhang et al [182] studied the radiation resistance of single-and multilayer MoS 2 FETs under another type of common irradiation source in space environment, i.e., He ions. By using 2 MeV He + irradiation it was found that singlelayer MoS 2 devices showed significant degradation with fluence of 10 11 particles cm −2 .…”

Highly Sensitive and Fast Responsive Humidity Sensor based on 2D PtSe2 with Gamma Radiation Tolerance

“…[ 7–10 ] Recently, TMDs have been addressed in several studies, toward the potential implementation in the nuclear energy sector and space applications, because of their intrinsically small size, lightweight, low power requirement, and distinguishable electrical/chemical properties. [ 11–13 ] One of the challenges for the sensors or electronic devices in such fields is the robustness and reliable operation under ionizing radiation such as high‐energy protons, electrons, α‐particles, X‐rays, and γ‐rays (gamma‐rays). [ 14,15 ] Several factors such as in situ healing of defects during irradiation, absence of collisional cascade, presence of grain boundary, high conductivity, nanoporosity, etc., make the 2D materials a strong candidate as a radiation‐tolerant system.…”