Planar InGaAs(P)/InP p-in photodiodes have been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). High-quality and uniform epitaxial layers are obtained. It is noted that the InGaAs layer background concentration is as low as 4:5 Â 10 13 cm À3. The dark current is significantly reduced by using a wider-band-gap material of quaternary In x Ga 1Àx As y P 1Ày as a cap layer to reduce the device surface leakage current. In addition, the device becomes highly photosensitive due to the reduction of the absorption of the radiation in the narrow-band-gap In x Ga 1Àx As y P 1Ày cap layer. The p-in photodiode with a wide-band-gap InP cap layer exhibits a dark current as low as 60 pA at À10 V bias, corresponding to a dark current density of 4:2 Â 10 À7 A/cm 2 .
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