Characteristics of In&amp;lt;tex&amp;gt;$_0.425$&amp;lt;/tex&amp;gt;Al&amp;lt;tex&amp;gt;$_0.575$&amp;lt;/tex&amp;gt;As–InxGa&amp;lt;tex&amp;gt;$_1-x$&amp;lt;/tex&amp;gt;As Metamorphic HEMTs With Pseudomorphic and Symmetrically Graded Channels

Hsu, Wei‐Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Huang, Jen-Fa; Huang, Dong-Hai; Su, Ke-Hua; Lin, Yu-Hsiang; Wu, Chang-Luen

doi:10.1109/ted.2005.848863

Cited by 35 publications

(16 citation statements)

References 18 publications

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“…A S A TERNARY compound semiconductor material, In x Al 1−x As has been extensively used in high-speed electronic and optoelectronic devices including MODFETs and photodetectors [1], [2]. Previous researches were mainly focused on the properties of In 0.52 Al 0.48 As (E g = 1.456 eV), because its lattice constant is matched to InP as well as In 0.53 Ga 0.47 As materials.…”

Section: Introductionmentioning

confidence: 99%

A Novel $\hbox{Pt/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ Schottky Diode-Type Hydrogen Sensor

Hung

Lin

Chen

et al. 2006

IEEE Electron Device Lett.

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On the basis of a Pt/In 0.52 Al 0.48 As metalsemiconductor structure, a novel hydrogen sensor is fabricated and demonstrated. The studied Pt/In 0.52 Al 0.48 As Schottky diode-type hydrogen sensor exhibits significant sensing performance including high relative sensitivity ratio of about 2600% (under the 1% H 2 /air gas and V R = −0.5 V at 30 • C), large current variation of 310 µA (under the 1% H 2 /air gas and V R = −5 V at 200 • C), widespread reverse-voltage regime (0 ∼ −5 V), stable hydrogen-sensing current-voltage (I-V ) curves, and fast transient response time of 1.5 s. The calculated Schottky barrier-height change and series-resistance variation, from the thermionic-emission model and Norde method, are 87.0 meV and 288 Ω, respectively (under the 1% H 2 /air gas at 30 • C). The hydrogen concentrations and operating temperatures tested in this letter are in the range of 15 ppm-1% H 2 /air and 30 • C-250 • C, respectively. Based on the excellent integration compatibility with InP-based electronic devices, the studied device provides the potentiality in high-performance sensor-array applications.Index Terms-In 0.52 Al 0.48 As, Pt, relative sensitivity ratio, reverse voltage, Schottky diode.

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Section: Introductionmentioning

confidence: 99%

A Novel $\hbox{Pt/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ Schottky Diode-Type Hydrogen Sensor

Hung

Lin

Chen

et al. 2006

IEEE Electron Device Lett.

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“…The maximum output power density of 171.38 mW/mm for device A exhibits a 77.8% improvement when compared with that of 161.8 mW/mm for device B. In addition, as compared with previous work, device A exhibits an excellent power performance. This indicates that the higher current density of the double δ-doped structure (device A) could improve the related power performance …”

Section: Resultsmentioning

confidence: 48%

Performance of Metamorphic Transistors with δ-Doped Structures

et al. 2011

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The interesting dc, microwave, and power performance of double and single δ-doped metamorphic high electron mobility transistors (MHEMTs), grown by molecular beam epitaxy, are studied. Because of the use of a double δ-doped structure, the increase of carrier density and uniform distribution of carriers within the channel are found. Therefore, the superior characteristics in the drain saturation current of 544.4 (523.9) mA/mm, extrinsic transconductance of 361.2 (312.4) mS/mm, drain current operation region of 236.9 (227.4) mA/mm, unity current gain cutoff frequency of 55.1 GHz, maximum oscillation frequency of 129.17 GHz, output power of 15.35 dBm, power gain of 24.65 dB, and power added efficiency of 39.4% could be achieved for a 0.6 × 100 μm2 gate dimension MHEMT at 300 (510) K. With increasing the temperature from 300 to 510 K, the slight temperature variation rates are also found for the studied device with a double δ-doped structure. On the other hand, the kink effect and impact ionization for the studied device with a double δ-doped structure are considerably suppressed.

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“…From the above result, an intrinsic transconductance (G m ) of 77 mS/mm was calculated by G m = g m /(1 À R s · g m ). The output conductance values, determined by g d = 1/R ds , is approximately 1.15 mS/mm at V DS = 2 V and V GS = À0.5 V. The lower output conductance that compared with PC-MHEMT [17] is attributed to the reduced impact ionization effect by using the In 0.35 Ga 0.65 As channel. The intrinsic cut-off frequency (f T ), can be approximated by G m /2p(C gs + C gd ), of the studied MHEMT is determined to be 39.8 GHz.…”

Section: Resultsmentioning

confidence: 93%

High power and high breakdown δ-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT

Hsu

Chen

et al. 2006

Solid-State Electronics

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Characteristics of In<tex>$_0.425$</tex>Al<tex>$_0.575$</tex>As–InxGa<tex>$_1-x$</tex>As Metamorphic HEMTs With Pseudomorphic and Symmetrically Graded Channels

Cited by 35 publications

References 18 publications

A Novel $\hbox{Pt/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ Schottky Diode-Type Hydrogen Sensor

A Novel $\hbox{Pt/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ Schottky Diode-Type Hydrogen Sensor

Performance of Metamorphic Transistors with δ-Doped Structures

High power and high breakdown δ-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT

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