Excellent passivation of an n-type Czochralski crystalline silicon surface is made possible by the deposition of hydrogenated silicon carbide (Si1−xCx:H) layers in the electron cyclotron resonance chemical vapor deposition. We investigate the structural effect with various CH4/SiH4 dilution ratios, and the lowest effective surface recombination velocity (21.03 cm/s) that can be obtained. We also demonstrate that the Voc can be improved more than 200 mV by inserting Si1−xCx:H layers to form hetero-junction with intrinsic thin layer (HIT) solar cells. The conversion efficiency of the planar HIT solar cell with μc-Si emitter can reach 13%.
Hydrogenated silicon thin film was deposited on glass substrate using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) system. Fourier transform infrared spectroscopy (FTIR) and scanning electron microscope (SEM) were used to measure the film properties. It showed that higher deposition rate (>2nm/sec) and lower microstructure parameter (20%
In this study, boron doped p-type hydrogenated silicon films were prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) at lower temperature (<200℃) for solar cell. In order to analyze the optical and electrical property of the film, the film’s absorption coefficient and imaginary part of the pseudo-dielectric function 〈ε2〉 as well as resistivity and dopant concentration were obtained by spectroscopic ellipsometry (SE) and Hall measurement respectively. The Optical Emission Spectroscopy (OES) is used as a diagnostic tool for analyzing the plasma spectra, and we try to find out the correlation between plasma spectra and film properties. Based on the above results, we can build up the database from plasma spectra corresponding to film properties, and the processing time required for optimization of process can be reduced significantly. In addition, it was found that the applications of these results can be used for the phase transition in the boron doped hydrogenated silicon film from amorphous to microcrystalline structure.
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