Metal interconnects in flexible and wearable devices are heterogeneous metal-polymer systems that are expected to sustain large deformation without failure. The principal strategy to make strain tolerant interconnect lines on flexible substrates has comprised of creating serpentine structures of metal films with either in-plane or out-of-plane waves, using porous substrates, or using highly ductile materials such as gold. The wavy and helical serpentine patterns preclude high-density packing of interconnect lines on devices, while ductile materials such as Au are cost prohibitive for real world applications. Ductile copper films can be stretched if bonded to the substrate, but show high level of cracking beyond few tens of % strain. In this paper, we demonstrate a material system consisting of Indium metal film over an elastomer (PDMS) with a discontinuous Cr layer such that the metal interconnect can be stretched to extremely high linear strain (up to 100%) without any visible cracks. Such linear strain in metal interconnects exceeds that reported in literature and is obtained without the use of any geometrical manipulations or porous substrates. Systematic experimentation is carried out to explain the mechanisms that allow the Indium film to sustain the high strain level without failure. The islands forming the discontinuous Cr layer are shown to move apart from each other during stretching without delamination, providing strong adhesion to the Indium film while accommodating the large strain in the system. The Indium film is shown to form surface wrinkles upon release from the large strain, confirming its strong adhesion to PDMS. A model is proposed based upon the observations that can explain the high level of stretch-ability of the Indium metal film over the PDMS substrate. V C 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4929605] The proliferation of 'smart' wearable devices is predicted to lead to the "Internet of Things" (IoT) revolution over the next two decades. The examples of such devices include flexible displays, 1-4 robotic skin, 5 stretchable circuits, 6 hemispherical electronic eye, 7 epidermal electronics, 8 cardiac sensors, and diagnostic contact lens. 9 Flexible electronic platforms typically require that its components be connected with each other on a flexible substrate using metallic interconnects. The design and manufacturing of such interconnects that have high spatial density and can be reliably stretched to large strains has become one of the most critical challenges for the IoT revolution. The essential requirements for the interconnect system include strain compatibility of components at the interfaces, minimal increase in resistivity under stretching, and recovery of the resistivity once the strain is released. In addition, any geometrical manipulation to accommodate deformation must be compatible with the interconnect density demanded by the industry. 10,11 The current methods to improve interconnect stretch-ability include creating serpentine structures of metal films 12-2...
In this paper, various methods for characterization of semiconductor charge carrier lifetime are reviewed and an optical technique is described in detail. This technique is contactless, all-optical and based upon measurements of free carrier absorption transients by an infrared probe beam following electron-hole pair excitation by a pulsed laser beam. Main features are a direct probing of the excess carrier density coupled with a homogeneous carrier distribution within the sample, enabling precision studies of different recombination mechanisms. The method is capable of measuring the lifetime over a broad range of injections (10 13 -10 18 cm -3 ) probing the minority carrier lifetime, the high injection lifetime and Auger recombination, as well as the transition between these ranges. Performance and limitations of the technique, such as lateral resolution, are addressed while application of the technique for lifetime mapping and effects of surface recombination are also outlined.Results from detailed studies of the injection dependence yield good agreement with the Shockley-Read-Hall theory, whereas the coefficient for Auger recombination shows an apparent shift to a higher value, with respect to the traditionally accepted value, at carrier densities below 2×10 17 cm -3 . Data also indicate an increased value of the coefficient for bimolecular recombination from the generally accepted value. Measurement on an electron irradiated wafer and wafers of exceptionally high carrier lifetimes are also discussed within the framework of different recombination mechanisms.
In global software development, requirements re-usability is a common practice which ultimately helps to maintain project quality and reduce both development time and cost. However, when a large-scale project is distributed, there are some critical factors needed to be maintained and managed for reusing requirements and it is considered a challenging job to interrelate the requirements between two identical projects. In this study, we have pointed out 48 challenges faced and 43 mitigation techniques used when implementing requirements re-usability in global software development projects among distributed teams. The challenges distributed teams frequently encounter can be divided into three considering issues as Communication, Coordination and Control of distributed teams in global software development. The results from this study can be used to plan development strategies while reusing requirements in distributed manners.
Flexible metallic interconnects are highly important in the emerging field of deformable/wearable electronics. In our previous work [Arafat et al., Appl. Phys. Lett. 107, 081906 (2015)], interconnect films of Indium metal, periodically bonded to an elastomer substrate using a thin discontinuous/ cracked adhesion interlayer of Cr, were shown to sustain a linear strain of 80%-100% without failure during repeated cycling. In this paper, we investigate the mechanisms that allow such films to be stretched to a large strain without rupture along with strategies to prevent a deterioration in their electrical performance under high linear strain. Scanning Electron Microscopy and Digital Image Correlation are used to map the strain field of the Cr adhesion interlayer and the In interconnect film when the elastomer substrate is stretched. It is shown that the Cr interlayer morphology, consisting of islands separated by bi-axial cracks, accommodates the strain primarily by widening of the cracks between the islands along the tensile direction. This behavior is shown to cause the strain in the In interconnect film to be discontinuous and concentrated in bands perpendicular to the loading direction. This localization of strain at numerous periodically spaced locations preempts strain-localization at one location and makes the In film highly stretchable by delaying rupture. Finally, the elastic-plastic mismatch-driven wrinkling of the In interconnect upon release from first loading cycle is utilized to delay the onset of plasticity and allow the interconnect to be stretched repeatedly up to 25% linear strain in subsequent cycles without a deterioration of its electrical performance.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.