New soluble host materials with benzocarbazole and triphenyltriazine moieties, 11-[3-(4,6-diphenyl-[1,3,5]triazin-2-yl)-phenyl]-11H-benzo[a]carbazole and 11-[3'-(4,6-diphenyl-[1,3,5]triazin-2-yl)-biphenyl-4-yl]-11H-benzo[a]carbazole, were synthesized for highly efficient red phosphorescent organic light-emitting diodes (PHOLED). Hole-transporting benzocarbazole moiety and electron transporting triphenyltriazine moiety, which are severely twisted each other enhance the solubility of those materials in common organic solvent. The improved solubility from this molecular design could be due to a reduced π-π stacking interaction, which gives a very uniform film morphology after spin coating of those materials. As a result, we obtained highly efficient soluble PHOLEDs combined with an evaporated blue common layer structure. The resultant red PHOLED exhibited the maximum current efficiency as well as external quantum efficiency values up to 23.7 cd/A and 19.0%.
We prepared highly-efficient solution-processed red phosphorescent organic light emitting diodes (PHOLEDs) with a blue common layer structure that can reasonably confine the triplet excitons inside of the red emission layer (EML) with the assistance of a bipolar exciton blocking layer. The red PHOLEDs containing EML with a 7 : 3 ratio of 11-(4,6-diphenyl-[1,3,5]triazin-2-yl)-12-phenyl-11,12-dihydro-11,12-diaza-indeno[2,1-a]fluorene (n-type host, NH) : 4-(3-(triphenylen-2-yl)phenyl)dibenzo[b,d]thiophene (p-type host, PH) doped with 5% Iridium(III) bis(2-(3,5-dimethylphenyl)quinolinato-N,C2’)tetramethylheptadionate (Red Dopant, RD) produced the highest current and power efficiencies at 23.4 cd/A and 13.6 lm/W, with a 19% external quantum efficiency at 1000 cd/m2. To the best of our knowledge, such efficiency was the best among those that have been obtained from solution-processed small molecular red PHOLEDs. In addition, the host molecules utilized in this study have no flexible spacers, such as an alkyl chain, which normally deteriorate the stability of the device.
The impact of anode buffer layers (ABLs) on the performance of CdSe quantum-dot light-emitting diodes (QLED) with a ZnO nanoparticle (NP) electron-transport layer and 4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) hole-transport layer was studied. Either MoO3 or 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) was used as the ABL. The QLED with a HAT-CN ABL exhibited better luminance performance, while the ultraviolet photoelectron spectroscopy and hole-only devices indicated that MoO3 was a superior hole injector. These results suggest that the QLED with a MoO3 ABL suffered from a severe charge carrier imbalance. Therefore, electron injection through the ZnO NP layer must be improved to further enhance the QLED performance.
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