A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This device has a gate length of 0.5 μm and a gate width of 2 × 40 μm. The G-FET channel is patterned into an array of bow-tie-shaped nanoconstrictions, resulting in the device impedance levels of ∼50 and the ON-OFF ratios of ≥4. The integrated mixer circuit is implemented in coplanar waveguide technology and realized on a 100-μm-thick highly resistive silicon substrate. The mixer conversion loss is measured to be 29 ± 2 dB across the 185-210-GHz band with 12.5-11.5 dBm of local oscillator (LO) pump power and >15-dB LO-RF isolation. The estimated 3-dB IF bandwidth is 15 GHz.
We report on the design and characterization of a 200 GHz resistive subharmonic mixer based on a single, multichannel CVD graphene field effect transistor (G-FET). The device has gate length 0.5 µm and width 2x40 µm. The integrated mixer circuit is implemented in coplanar waveguide (CPW) technology and realized on a 100 µm thick high resistive silicon substrate. The measured mixer conversion loss (CL) is 34 ± 3 dB across 190-210 GHz band with 10 dBm local oscillator (LO) pumping power and the overall minimum CL gives 31.5 dB at 190 GHz.
A receiver composed by a graphene FET 200-GHz mixer and a 1-GHz intermediate frequency amplifier integrated on a silicon substrate was modelled, fabricated and characterized. This is the first demonstration of a millimeter wave integrated receiver based on graphene FETs. The receiver conversion loss is measured to be 25 dB across the 185-205-GHz band with 16 dBm of local oscillator pump power, which is in good agreement with the circuit simulations. The simulations show that the receiver conversion loss can be significantly reduced to 16 dB by reducing the contact resistance and by realizing a higher charge carrier mobility in the mixer transistor.
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