Absorption and photoionization cross sections for H2O and D2O in the vacuum ultravioletThe vacuum ultraviolet absorption cross sections of SiH 4 , GeH4' Si 2 H 6 , and Si3Hg are reported for the wavelength region 107-220 nm using synchrotron radiation as a light source. Absorption maxima of these compounds were found at the exciting wavelengths of 115-119 nm. Broad peaks observed were mostly assigned as primarily Rydberg transitions of the USiH and USiSi bonding electrons to the 4s, 4p, and 4d orbitals. The absorption features of germane resemble those of monosilane. In the photoexcitation of monosilane, the emission of the SiH(A 2a_X2") transition was observed and its onset was found to be 132 ± 2nm. The absorption spectrum of disilane showed five peaks. They were mostly assigned as 2a lg -+4s, 2a lg -np(n = 4 -6) transitions and the strongest band was overlapped by 1e g -4d and leu -+4p Rydberg transitions. In trisilane molecules three very weak and broad peaks were recognized and assigned as 3b 2 -+4s, 4p and 4a 1-+48, 4d Rydberg transitions. The strongest band was tentatively assigned as the superposition of 1a 2 -4d and 3a l -+4p Rydberg excitations.

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The growth of hydrogenated amorphous silicon films on Al substrates in a flow reactor was studied using infrared reflection absorption spectroscopy. All three hydride species (SiHx , x=1–3) in the growing films were detected as stretching and bending absorption bands in P polarization spectra. The dominant absorption band, initially originating from higher hydrides, was shifted to lower wave numbers with an increase of film thickness. A steep rise in absorption intensity at the initial stage and a time delay in SiH emergence are discussed in terms of the enhancement of detection sensitivity in a hydrogen-rich layer and the time needed for the formation of a bulk-network structure, respectively.