Real time i
 n s
 i
 t
 u observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy

Toyoshima, Yasutake; Arai, Kazuo; Matsuda, Akihisa; Tanaka, Kazunobu

doi:10.1063/1.103168

Cited by 96 publications

(32 citation statements)

References 10 publications

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“…This problem can be partially solved by studying the absorption during the initial stages of film growth for ultrathin a-Si:H films. [7][8][9][10][11] These experiments have indicated that mainly higher hydrides ͑SiH 2 and SiH 3 ͒ are present during the initial film growth, but one cannot distinguish whether these higher hydrides are present at the substrate-film interface and/or at the film-vacuum interface ͑the surface͒ for thicker films. In fact, these experiments do not reveal information about the surface composition and coverage under steady-state film growth conditions.…”

Section: Introductionmentioning

confidence: 99%

In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

Kessels¹,

Marra²,

Sanden³

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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An in situ method based on attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) is presented for detecting surface silicon hydrides on plasma deposited hydrogenated amorphous silicon (a-Si:H) films and for determining their surface concentrations. Surface silicon hydrides are desorbed by exposing the a-Si:H films to low energy ions from a low density Ar plasma and by comparing the infrared spectrum before and after this low energy ion bombardment, the absorptions by surface hydrides can sensitively be separated from absorptions by bulk hydrides incorporated into the film. An experimental comparison with other methods that utilize isotope exchange of the surface hydrogen with deuterium showed good agreement and the advantages and disadvantages of the different methods are discussed. Furthermore, the determination of the composition of the surface hydrogen bondings on the basis of the literature data on hydrogenated crystalline silicon surfaces is presented, and quantification of the hydrogen surface coverage is discussed.

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Section: Introductionmentioning

confidence: 99%

In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

Kessels¹,

Marra²,

Sanden³

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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show abstract

“…3. It is worth mentioning that surface Sill3, which was observed only weakly in the present case, is often observed strongly in such experiments as an Hg lamp (Wadayama, Suetaka, Sekiguchi, 1988) or metastable Ar-induced CVD of a-Si (Toyoshima, Arai, Matsuda & Tanaka, 1990) and hydrogen termination of Si(100) surfaces (Chabal, Higashi, Raghavachari & Burrows, 1989). The transition dipole moment of the Sill3 symmetric stretching vibration is parallel to the C3v symmetry axis, which is almost perpendicular to the substrate surface as already mentioned.…”

Section: Figurementioning

confidence: 48%

“…3 appears to consist mainly of surface Sill2 stretching (2113cm -1) and surface Sill stretching (2100 cm -1) vibrational modes. The vibration of the Sill contained in the bulk network, which was reported at 2000 cm -1 (Toyoshima, Arai, Matsuda & Tanaka, 1990;Lucovsky, Nemanich & Knights 1979), was not observed, as shown in Fig. 3.…”

Section: Figurementioning

confidence: 60%

In Situ Detection of Surface SiHn in Synchrotron-Radiation-Induced Chemical Vapor Deposition of a-Si on an SiO2 Substrate

Yoshigoe

Nagasono²,

Mase³

et al. 1995

J Synchrotron Radiat

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The sensitivity and linearity of infrared reflection absorption spectroscopy (IRAS) has been significantly improved by using a buried-metal-layer (BML) substrate having an SiO2(15nm)/ Al(200nm)/Si(100) structure, instead of a plain Si(100) substrate. By applying this BML-IRAS technique to the in situ observation of synchrotron-radiation-induced chemical vapor deposition of amorphous Si (a-Si) on an SiO2 surface using Si2H6 gas, the vibrational spectra of surface SiHn species in this reaction system have been observed for the first time with sufficient sensitivity for submonolayer coverage. The main silicon hydride species after deposition at 423 K are surface Sill2 and Sill. Surface Sill3 and Sill2 are observed to be easily decomposed by synchrotron radiation irradiation. The decomposition rate of Sill by synchrotron radiation irradiation is much slower than those of SiH2 and Sill3.

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“…As shown in Fig. 1, in-situ IR monitoring of surface H [3][4][5][6][7][8][9][10] on PECVD-grown a-Si:H films at 430…”

Section: Discussionmentioning

confidence: 99%

“…The almost fully hydrogen-terminated nature of a-Si:H growing surface is reported [3][4][5][6][7][8][9][10], so [H-Surf] can be assumed to be constant. As a result, it is concluded that the growth rate must show 1st order dependence on the SiH 3 density, as mentioned earlier.…”

Section: Reaction Modelsmentioning

confidence: 99%

Origin of Pseudo Second Order Reaction in a-Si:H Growth

Toyoshima

2017

e-J. Surf. Sci. Nanotech.

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It is generally accepted that a pair of SiH3 radicals are responsible for the film growth reactions of hydrogenated amorphous silicon, namely a first SiH3 radical to pick up surface-terminating H leaving active site on the growing surface, and a second SiH3 to stick there. Since the first reaction step is rate determining, the film growth rate is proportional (1st order) to the SiH3 density. However, in some case, 2nd order dependence on SiH3 density is reported, especially when the film growth rate (and thus the SiH3 density) is quite low. This funny behavior contradicts the general concept that a higher order reaction will take place when the number density of the concerning species is high. In this report, a detailed analysis of these growth reactions based on the method of steady state is given to prevail that the origin of such a pseudo 2nd order dependence is clearly explained by introducing the reverse reaction to the first step that determines the growth rate. In addition, discussion is presented to show that such a reverse reaction is plausible.

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Real time i n s i t u observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy

Cited by 96 publications

References 10 publications

In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

In Situ Detection of Surface SiHn in Synchrotron-Radiation-Induced Chemical Vapor Deposition of a-Si on an SiO2 Substrate

Origin of Pseudo Second Order Reaction in a-Si:H Growth

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