The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films
fabricated on Al2O3(0001) substrates by a sputtering deposition were investigated. The partial
pressure of oxygen was controlled and the substrate temperature was kept to be 500 °C during
deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited
on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3).
The transmittance of the Ga2O3 films was measured to be more than 80 % at the visible and ultraviolet
regions although the electrical resistivity was high. In order to obtain both low electrical resistivity
and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn
into the Ga2O3 films would be required.
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