Neuromorphic systems aim to implement large‐scale artificial neural network on hardware to ultimately realize human‐level intelligence. The recent development of nonsilicon nanodevices has opened the huge potential of full memristive neural networks (FMNN), consisting of memristive neurons and synapses, for neuromorphic applications. Unlike the widely reported memristive synapses, the development of artificial neurons on memristive devices has less progress. Sophisticated neural dynamics is the major obstacle behind the lagging. Here a rich dynamics‐driven artificial neuron is demonstrated, which successfully emulates partial essential neural features of neural processing, including leaky integration, automatic threshold‐driven fire, and self‐recovery, in a unified manner. The realization of bioplausible artificial neurons on a single device with ultralow power consumption paves the way for constructing energy‐efficient large‐scale FMNN and may boost the development of neuromorphic systems with high density, low power, and fast speed.
The accumulation and extrusion of Ca2+ ions in the pre- and post-synaptic terminals play crucial roles in initiating short- and long-term plasticity (STP and LTP) in biological synapses, respectively. Mimicking these synaptic behaviors by electronic devices represents a vital step toward realization of neuromorphic computing. However, the majority of reported synaptic devices usually focus on the emulation of qualitatively synaptic behaviors; devices that can truly emulate the physical behavior of the synaptic Ca2+ ion dynamics in STP and LTP are rarely reported. In this work, Ag/Ag:Ta2O5/Pt self-doping memristors were developed to equivalently emulate the Ca2+ ion dynamics of biological synapses. With conductive filaments from double sources, these memristors produced unique double-switching behavior under voltage sweeps and demonstrated several essential synaptic behaviors under pulse stimuli, including STP, LTP, STP to LTP transition, and spike-rate-dependent plasticity. Experimental results and nanoparticle dynamic simulations both showed that Ag atoms from double sources could mimic Ca2+ dynamics in the pre- and post-synaptic terminals under stimuli. A perceptron network with an STP to LTP transition layer based on the self-doping memristors was also introduced and evaluated; simulations showed that this network could solve noisy figure recognition tasks efficiently. All of these results indicate that the self-doping memristors are promising components for future hardware creation of neuromorphic systems and emulate the characteristics of the brain.
Electrochemical metallization (ECM) cell kinetics are strongly determined by the electrolyte and can hardly be altered after the cell has been fabricated. Solid-state property tunable electrolytes in response to external stimuli are therefore desirable to introduce additional operational degree of freedom to the ECM cells, enabling novel applications such as multistate memory and reconfigurable computation. In this work, we use Ge2Sb2Te5(GST) as the electrolyte material whose solid state is switched from the amorphous(a) to the crystalline(c) phase thermally. Electrical heating too is readily achievable. The resistive switching characteristics of the cells with different GST phases are examined. The magnitude of the high resistance, the SET voltage and the on/off ratio are found to be considerably affected by the solid phase of GST, whereas the magnitude of the low resistance is least affected. Moreover, a transition from volatile to nonvolatile SET switching is only observed for c-GST based cell under prolonged voltage sweep, but not for a-GST based cell. This work provides a springboard for more studies on the manipulation of the ECM cell kinetics by tunable electrolyte and the resulting unprecedented device functionalities.
Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW materials has largely impeded its development in practical spintronic devices. Inspired by the lately discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.