2019
DOI: 10.1021/acsami.9b04901
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Self-Doping Memristors with Equivalently Synaptic Ion Dynamics for Neuromorphic Computing

Abstract: The accumulation and extrusion of Ca2+ ions in the pre- and post-synaptic terminals play crucial roles in initiating short- and long-term plasticity (STP and LTP) in biological synapses, respectively. Mimicking these synaptic behaviors by electronic devices represents a vital step toward realization of neuromorphic computing. However, the majority of reported synaptic devices usually focus on the emulation of qualitatively synaptic behaviors; devices that can truly emulate the physical behavior of the synaptic… Show more

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Cited by 43 publications
(32 citation statements)
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References 59 publications
(113 reference statements)
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“…memristor performance [145]. Besides, Ag-doped Ta 2 O 5 [146], Ag-doped HfO x [147], Ag-doped MgO x [147], Ag-doped SiO x N y [147], Cu-Al-codoped SiO 2 and Cu-Ga-codoped SiO 2 [148] have been employed to fabricate memristive devices based on metal ion migration.…”
Section: Metal Ion Migrationmentioning
confidence: 99%
“…memristor performance [145]. Besides, Ag-doped Ta 2 O 5 [146], Ag-doped HfO x [147], Ag-doped MgO x [147], Ag-doped SiO x N y [147], Cu-Al-codoped SiO 2 and Cu-Ga-codoped SiO 2 [148] have been employed to fabricate memristive devices based on metal ion migration.…”
Section: Metal Ion Migrationmentioning
confidence: 99%
“…In addition, this "analog" behavior makes the memristor suitable for neuromorphic computing applications. A large number of publications describes the possible use of memristors as artificial synapses [66][67][68][69][70] or even neurons [71][72][73].…”
Section: Memristors and Other Nonmagnetic Neuromorphic Computing Elementsmentioning
confidence: 99%
“…Under the negative and positive pulse trains, memristor is revealed respectively high and low resistance switching, which can completely match with stimulus and blockage spike of the bio synapse [27]. Also, self-doping memristors introduced to emulate the ion dynamics (Ca 2+ ) of biological synapses in Ag/Ag: Ta2O5/Pt structure [28]. Another work is a penetrate Ag into oxide of Pt/SiOxNy:Ag/Pt device.…”
mentioning
confidence: 99%
“…In neuromorphic engineering, CMOS based artificial synapses circuits have high power consumption due to multipart structure needs. The most attractive candidate among these structures are two terminal memristor which is exactly identical synapses [28]. Low power consumption and also three-dimensional scalability of memristors have advantages over conventional CMOS technology [30][31].…”
mentioning
confidence: 99%