An ultrahigh photocurrent gain has been found in the ultraviolet-absorbed GaN nanowires with m-directional long axis grown by chemical vapor deposition. The quantitative results have shown the gain values at 5.0×104–1.9×105 of the GaN nanowires with diameters from 40to135nm are near three orders of magnitude higher than the values of 5.2×101–1.6×102 estimated from the thin film counterparts. The intensity-dependent gain study has shown that the gain value is very sensitive to the excitation intensity following an inverse power law and no gain saturation observed in this investigated intensity range from 0.75to250W∕m2. This behavior has strongly suggested a surface-dominant rather than trap-dominant high gain mechanism in this one-dimensional nanostructure. The strong carrier localization effect induced by the surface electric field in the GaN nanowires is also discussed.

In this work, we present the development of a polymer-based capacitive sensing array. The proposed device is capable of measuring normal and shear forces, and can be easily realized by using micromachining techniques and flexible printed circuit board (FPCB) technologies. The sensing array consists of a polydimethlysiloxane (PDMS) structure and a FPCB. Each shear sensing element comprises four capacitive sensing cells arranged in a 2 × 2 array, and each capacitive sensing cell has two sensing electrodes and a common floating electrode. The sensing electrodes as well as the metal interconnect for signal scanning are implemented on the FPCB, while the floating electrodes are patterned on the PDMS structure. This design can effectively reduce the complexity of the capacitive structures, and thus makes the device highly manufacturable. The characteristics of the devices with different dimensions were measured and discussed. A scanning circuit was also designed and implemented. The measured maximum sensitivity is 1.67%/mN. The minimum resolvable force is 26 mN measured by the scanning circuit. The capacitance distributions induced by normal and shear forces were also successfully captured by the sensing array.

In this work, we present the development of a capacitive tactile sensing array realized by using MEMS fabrication techniques and flexible printed circuit board (FPCB) technologies. The sensing array, which consists of two micromachined polydimethlysiloxane (PDMS) structures and a FPCB, will be used as the artificial skin for robot applications. Each capacitive sensing element comprises two sensing electrodes and a common floating electrode. The sensing electrodes and the metal interconnect for signal scanning are implemented on the FPCB, while the floating electrode is patterned on one of the PDMS structures. This special design can effectively reduce the complexity of the device structure and thus makes the device highly manufacturable. The characteristics of the devices with different dimensions are measured and discussed. The corresponding scanning circuits are also designed and implemented. The tactile images induced by the PMMA stamps of different shapes are also successfully captured by a fabricated 8 × 8 array.

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In this paper, we describe how a few simulations of felly meshed dynamical problems cart be used to construct efficient low-order models for system-level design of microstructures. We report on the use of this method to capture the measured behavior of a pressure sensor based on the pull-in time of a beam. Results show that the reduced order model decreases simulation time by at least a factor of 37 while achieving good agreement with experimental data.

A new and general approach to achieving efficient electrically driven light emission from a Si-based nano p-n junction array is introduced. A wafer-scale array of p-type silicon nanotips were formed by a single-step self-masked dry etching process, which is compatible with current semiconductor technologies. On top of the silicon nanotip array, a layer of n-type ZnO film was grown by pulsed laser deposition. Both the narrow line width of 10 nm in cathodoluminescence spectra and the appearance of multiphonon Raman spectra up to the fourth order indicate the excellent quality of the ZnO film. The turn-on voltage of our ZnO/Si nanotip array is found to be approximately 2.4 V, which is 2 times smaller than its thin film counterpart. Moreover, electroluminescence (EL) from our ZnO/Si nanotips array light-emitting diode (LED) has been demonstrated. Our results could open up new possibilities to integrate silicon-based optoelectronic devices, such as highly efficient LEDs, with standard Si ultralarge-scale integrated technology.