Alignment of nanowires over a large area of flat and patterned substrates is a prerequisite to use their collective properties in devices such as gas sensors. In this work, uniform single-crystalline ultrathin W18 O49 nanowires with diameters less than 2 nm and aspect ratios larger than 100 have been synthesized, and, despite their flexibility, assembled into thin films with high orientational order over a macroscopic area by the Langmuir-Blodgett technique. Alignment of the tungsten oxide nanowires was also possible on top of sensor substrates equipped with electrodes. Such sensor devices were found to exhibit outstanding sensitivity to H2 at room temperature.
The design and fabrication of a microfluidic cytometer system and its application for reticulocyte detection are described. This chip can count the target cells, which are focused at the detection window without sheath flow. This cytometer system based on optimized epifluoresence has a competitive advantage in the signal-to-noise ratio. Induced fluorescence from the reticulocyte binded with antibody is detected by the optical module and then transformed into the electronic signal by a photo multiplier tube. After signal processing, the results are automatically read out by a digital module and displayed on the system. To evaluate this microfluidic cytometer system, experiments employing polystyrene (PS) micro beads and induced reticulocyte of mice anemia are carried out, respectively, and the results illustrate that the microfluidic cytometer system is effective in detecting the reticulocyte.
A novel POCl3 post-oxidation annealing recipe was developed. The interface trap density (Dit) is extracted by the C-ΨS method close to conduction band edge. The performance of the POCl3-treated oxide has been analyzed based on current density-electric field (J-E) measurements. A comprehensive and practical 4H-SiC power VDMOSFET manufacturing traveler has been designed. The power MOSFET that was fabricated based on this traveler exhibits less than half of the on-resistance and shows improved interface characteristics compared to a similarly designed commercial power MOSFET.
A good understanding of internal MOSFET capacitances is required in order to accurately model the dynamic characteristics of SiC MOSFETs. MOSFET compact models used to simulate and optimize power converter systems have to take into account the effects of non-linear voltage-dependent internal MOSFET capacitances correctly. In this paper, the individual influence of the voltage-dependent drain-source capacitance C ds and the drain-gate capacitance C dg on the MOSFET dynamics is investigated in detail. A comprehensive analysis of the switching performance of 1.2 kV SiC power MOSFETs with respect to C ds and C dg by means of a physics-based compact model, TCAD modeling, and the switching measurements of a 1.2 kV 80 mΩ SiC power MOSFET is presented. It is demonstrated that the non-linearity of C gd impacts the turn-off delay time t d,OFF , while the non-linearity of C ds does not have a significant impact on the switching transients.
Großflächiges Anordnen von Nanodrähten auf ebenen und strukturierten Substraten bildet die Voraussetzung für die Nutzung kollektiver Eigenschaften z. B. in der Gassensorik. In der hier vorgestellten Arbeit wurden gleichfçrmi-ge, einkristalline und ultradünne W 18 O 49 -Nanodrähte mit einem Durchmesser < 2 nm und einem Aspektverhältnis > 100 synthetisiert. Trotz ihrer großen mechanischen Flexibilität konnten sie mithilfe der Langmuir-Blodgett-Technik zu Dünnschichten mit hoher Ordnung auf einem makroskopischen Flächenbereich angeordnet werden. Das Anordnen der Wolframoxidnanodrähte konnte auch auf Sensorsubstraten mit Elektroden durchgeführt werden. Diese Sensoren zeigten bei Raumtemperatur hervorragende Eigenschaften für die H 2 -Messung.
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