The typical two-dimensional (2D) semiconductors MoS2, MoSe2, WS2, WSe2 and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono-elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first-principles calculations. Interestingly, although As and Sb are typically semimetals in the bulk, they are transformed into indirect semiconductors with band gaps of 2.49 and 2.28 eV when thinned to one atomic layer. Significantly, under small biaxial strain, these materials were transformed from indirect into direct band-gap semiconductors. Such dramatic changes in the electronic structure could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals.

Unlike the unstable black phosphorous, another two-dimensional group-VA material, antimonene, was recently predicted to exhibit good stability and remarkable physical properties. However, the synthesis of high-quality monolayer or few-layer antimonenes, sparsely reported, has greatly hindered the development of this new field. Here, we report the van der Waals epitaxy growth of few-layer antimonene monocrystalline polygons, their atomical microstructure and stability in ambient condition. The high-quality, few-layer antimonene monocrystalline polygons can be synthesized on various substrates, including flexible ones, via van der Waals epitaxy growth. Raman spectroscopy and transmission electron microscopy reveal that the obtained antimonene polygons have buckled rhombohedral atomic structure, consistent with the theoretically predicted most stable β-phase allotrope. The very high stability of antimonenes was observed after aging in air for 30 days. First-principle and molecular dynamics simulation results confirmed that compared with phosphorene, antimonene is less likely to be oxidized and possesses higher thermodynamic stability in oxygen atmosphere at room temperature. Moreover, antimonene polygons show high electrical conductivity up to 104 S m−1 and good optical transparency in the visible light range, promising in transparent conductive electrode applications.

Optoelectronic applications require materials both responsive to objective photons and able to transfer carriers, so new two-dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability. The energy band gaps of 2D semiconducting Group 15 monolayers cover a wide range from 0.36 to 2.62 eV, which are crucial for broadband photoresponse. Significantly, phosphorene, arsenene, and bismuthene possess carrier mobilities as high as several thousand cm(2)  V(-1)  s(-1) . Combining such broad band gaps and superior carrier mobilities, 2D Group 15 monolayers are promising candidates for nanoelectronics and optoelectronics.

The typical two‐dimensional (2D) semiconductors MoS2, MoSe2, WS2, WSe2 and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono‐elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first‐principles calculations. Interestingly, although As and Sb are typically semimetals in the bulk, they are transformed into indirect semiconductors with band gaps of 2.49 and 2.28 eV when thinned to one atomic layer. Significantly, under small biaxial strain, these materials were transformed from indirect into direct band‐gap semiconductors. Such dramatic changes in the electronic structure could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals.

Optoelectronic applications require materials both responsive to objective photons and able to transfer carriers,so new two-dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. Ab road range of band gaps and high mobilities of a2Dsemiconductor family,c omposed of monolayer of Group 15 elements (phosphorene,arsenene,antimonene,bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability.T he energy band gaps of 2D semiconducting Group 15 monolayers cover awide range from 0.36 to 2.62 eV,which are crucial for broadband photoresponse.S ignificantly,p hosphorene,a rsenene,a nd bismuthene possess carrier mobilities as high as several thousand cm 2 V À1 s À1 .Combining such broad band gaps and superior carrier mobilities,2 DG roup 15 monolayers are promising candidates for nanoelectronics and optoelectronics.

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Power packs integrating both photovoltaic parts and energy storage parts have gained great scientific and technological attention due to the increasing demand for green energy and the tendency for miniaturization and multifunctionalization in electronics industry. In this study, we demonstrate novel integration of perovskite solar cell and solid-state supercapacitor for power packs. The perovskite solar cell is integrated with the supercapacitor based on common carbon electrodes to hybridize photoelectric conversion and energy storage. The power pack achieves a voltage of 0.84 V when the supercapacitor is charged by the perovskite solar cell under the AM 1.5G white light illumination with a 0.071 cm active area, reaching an energy storage proportion of 76% and an overall conversion efficiency of 5.26%. When the supercapacitor is precharged at 1.0 V, an instant overall output efficiency of 22.9% can be achieved if the perovskite solar cell and supercapacitor are connected in series, exhibiting great potential in the applications of solar energy storage and flexible electronics such as portable and wearable devices.

To push the energy density limit of supercapacitors, proper pseudocapacitive materials with favorable nanostructures are urgently pursued. Ternary transition metal sulfides are promising electrode materials due to the better conductivity and higher electrochemical activity in comparison to the single element sulfides and transition metal oxides. In this work, we have successfully synthesized porous CuCo2S4 nanorod array (NRAs) on carbon textile through a stepwise hydrothermal method, including the growth of the Cu-Co precursor nanowire arrays and subsequent conversion into CuCo2S4 NRAs via anion exchange reaction. The CuCo2S4 NRAs electrode exhibits a greatly enhanced specific capacitance and an outstanding cycling stability. Moreover, an asymmetric supercapacitor using the CuCo2S4 NRAs as positive electrode and activated carbon as negative electrode delivers a high energy density of 56.96 W h kg−1. Such superior performance demonstrate that the CuCo2S4 NRAs are promising materials for future energy storage applications.