2015
DOI: 10.1002/ange.201411246
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Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap Transitions

Abstract: The typical two‐dimensional (2D) semiconductors MoS2, MoSe2, WS2, WSe2 and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono‐elemental semiconductors, namely monolayered arsenene and antimonene, with wide band… Show more

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Cited by 450 publications
(285 citation statements)
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“…In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of carbon phosphide (CP) monolayer consisted of sp 2 hybridized C atoms and sp the gapless nature of group IV monolayers is one of the major obstacles for their applications in transistors. Recently, the group V elemental monolayers such as phosphorene 5,6 , arsenene 7,8 and antimonene 9,10 were established as promising 2D materials with electronic properties which are significantly different from those of the group IV elemental monolayers. For example, phosphorene is a direct band gap semiconductor with anisotropic electronic conductance and high hole mobility 5,11,12 .…”
Section: Introductionmentioning
confidence: 99%
“…In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of carbon phosphide (CP) monolayer consisted of sp 2 hybridized C atoms and sp the gapless nature of group IV monolayers is one of the major obstacles for their applications in transistors. Recently, the group V elemental monolayers such as phosphorene 5,6 , arsenene 7,8 and antimonene 9,10 were established as promising 2D materials with electronic properties which are significantly different from those of the group IV elemental monolayers. For example, phosphorene is a direct band gap semiconductor with anisotropic electronic conductance and high hole mobility 5,11,12 .…”
Section: Introductionmentioning
confidence: 99%
“…After the synthesis of very thin films of phosphorus [27] researchers started to seek similar structures in other group-V elements or pnictogens. Recent theoretical studies have predicted that nitrogen [28], phosphorus [29][30][31], arsenic [32][33][34][35], antimony [36][37][38][39], bismuth [40][41][42][43], and compounds of group-V elements [44] can form stable freestanding SL, planar as well as buckled honeycomb (b) structures similar to that of silicene and germanene and also other manifolds, such as SL symmetric (w) and asymmetric (aw) washboard structures, among others. These SL phases are named, respectively, nitrogene, phosphorene, arsenene, antimonene, and bismuthene.…”
Section: Introductionmentioning
confidence: 99%
“…Phononic properties and thermal conductivity vary significantly from one 2D system to another [15][16][17][18] . For example, silicene has a buckled structure and a lower thermal conductivity 19,20 compared to graphene 12,21,22 .2D structures of arsenic and phosphorous have been recently investigated [23][24][25][26][27] . Arsenic and phosphorus are in the 5th group of the periodic table and both have different allotropes.…”
mentioning
confidence: 99%