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CoFe(2)O(4) nanoparticles were fabricated by a sol-gel method and then were coated with Co(3)Fe(7)-Co by means of a simple reduction process at different temperatures under 2% H(2) with the protection of argon to generate the dielectric-core/metallic-shell structure. The optimum reflection loss (RL) calculated from permittivity and permeability of the 80 wt% CoFe(2)O(4)/Co(3)Fe(7)-Co and 20 wt% epoxy resin composites reached - 34.4 dB, which was much lower than that of unreduced CoFe(2)O(4) and epoxy resin composites, at 2.4 GHz with a matching thickness of 4.0 mm. Moreover the RL exceeding - 10 dB in the maximum frequency range of 2.2-16 GHz was achieved for a thickness of composites of 1.0-4.5 mm with 600 °C thermal reduction process. The improved microwave absorption properties are a consequence of a proper electromagnetic match and the enhanced magnetic loss besides its dielectric loss due to the existence of the core/shell structure in CoFe(2)O(4) composites. Thus, the reductive CoFe(2)O(4) nanoparticles have great potential for being a highly efficient microwave absorber.

The finding of an extremely large magnetoresistance effect on silicon based p–n junction with vertical geometry over a wide range of temperatures and magnetic fields is reported. A 2500% magnetoresistance ratio of the Si p–n junction is observed at room temperature with a magnetic field of 5 T and the applied bias voltage of only 6 V, while a magnetoresistance ratio of 25 000% is achieved at 100 K. The current‐voltage (I–V) behaviors under various external magnetic fields obey an exponential relationship, and the magnetoresistance effect is significantly enhanced by both contributions of the electric field inhomogeneity and carrier concentrations variation. Theoretical analysis using classical p–n junction transport equation is adapted to describe the I–V curves of the p–n junction at different magnetic fields and reveals that the large magnetoresistance effect origins from a change of space‐charge region in the p–n junction induced by external magnetic field. The results indicate that the conventional p–n junction is proposed to be used as a multifunctional material based on the interplay between electronic and magnetic response, which is significant for future magneto‐electronics in the semiconductor industry.

Multilevel remanence states have potential applications in ultra-high-density storage and neuromorphic computing. Continuous tailoring of the multilevel remanence states by spin-orbit torque (SOT) is reported in perpendicularly magnetized Pt/Co/IrMn heterostructures. Double-biased hysteresis loops with only one remanence state can be tuned from the positively or negatively single-biased loops by SOT controlled sign of the exchange-bias field. The remanence states associated with the heights of the sub-loops are continually changed by tuning the ratio of the positively and negatively oriented ferromagnetic domains. The multilevel storage cells are demonstrated by reading the remanent Hall resistance through changing the sign and/or the magnitude of current pulse. The synaptic plasticity behaviors for neuromorphic computing are also simulated by varying the remanent Hall resistance under the consecutive current pulses. This work demonstrates that SOT is an effective method to tailor the remanence states in the double-biased heavy metal/ ferromagnetic/antiferromagnetic system. The multilevel-stable remanence states driven by SOT show potential applications in future multilevel memories and neuromorphic computing devices.

Room temperature ferromagnetism has been observed in SnO2 nanowires synthesized by a chemical vapor deposition using Au layers as catalyst. The nanowires are homogeneous and single-crystalline grown along the [101] direction, with diameters ranging from 25 to 100 nm and length greater than 20 microm. The special magnetization reaches 0.114 emu/g for the nanowires with diameter of approximately 25 nm and reduces with increasing diameters. Branched SnO2 nanowires were prepared via a two-step vapor-liquid-solid approach, and an enhanced magnetization was obtained. To the contrary, the nanowires annealed at 1300 degrees C in air were completely transformed into the particles and exhibit weakened magnetization. These results demonstrate that the ferromagnetic properties of the samples depend on the surface-to-volume ratio of nanowires. With a combined study of photoluminescence, our results reveal that the oxygen vacancies at the surface of nanowires contribute to the ferromagnetism of SnO2 nanowires. This argument is further confirmed by a sequential annealing in a rich-oxygen atmosphere, then in a low vacuum condition.